Simulation of Gain in Semiconductor Optical Amplifier Tension

Subject Areas : Majlesi Journal of Telecommunication Devices

Aram Ghaderi ¹

1 - Master of Electrical Engineering, Islamic Azad University, Science and Research Kurdistan

Received: 2015-10-17 Accepted : 2015-11-01 Published : 2015-12-01

Keywords:

References:

[1] P. Urquhart, “Review of Rare Earth Doped Fibre Lasers and Amplifiers,” pp. 385–407, 1988.

[2] Y. Aoki, “Properties of Fiber Raman Amplifiers and Their Applicability to Digital Optical Communication Systems,” Light. Technol, vol. 6, no. 7, pp. 1225–1239, 1988.

[3] J. C. Simon, “Semiconductor laser Amplifier for single mode fihcr communication systems,” vol. 4, pp. 52–63, 1983.

[4] O. N. ANDERS, “Semiconductor Optical Amplifiers,” IEEE, vol. 80, pp. 375–382, Mar. 1992.

[5] E. Desurvire, “Erbium-Doped Fibre Amplifiers: Principles and Applications,” John Wiley N. Y.

[6] M. W.J, “Erbium-Doped Glass for Amplifiers at 1550 nm,” IEEE J Light. Technol, vol. 9, pp. 234–250, 1991.

[7] Shoichi Sudo, Optical Fiber Amplifiers: Materials, Devices, and Applications. Artech House Optoelectronics Library, 1997.

[8] M. j Connelly, Semiconductor optical Amplifiers. university of Limerick,Ireland: Kluwer Academic, 2002.

[9] C. Politi, M. J. O’Mahony, and D. Klonidis, “Dynamic behavior of wavelength converters based on FWM in SOAs,” IEEE J Quantum Electron. vol. 44, pp. 108–125, Feb. 2006.

[10] D. K.Cheng, field and wave Electromagnetics, 16th ed. Univercity of tehran, 2009.

[11] M. J. Connelly, “Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier,” IEEE J. QUANTUM Electron. vol. 43, pp. 47–56, Jan. 2007.

[12] S. D. Personick, “Applications for quantum amplifiers in simple digital optical communication systems 8,” Bell Syst, vol. 52, pp. 117–133, 1973.

[13] G. Zeidler, “Use of laser Amplifiers in glass fibre communication systems 7,” Siemens Forch, pp. 227–234, 1973.

[14] Y. Yamamoto, “Characteristics of AlGaAs Fabry-Perot cavity type laser amplifiers 9,” IEEE J Quantum Electron, vol. 16, pp. 1047–1052, 1980.

[15] J. C. Simon, “GaInAsP Semiconductor laser Amplifiers for single-mode fibre communications 11,” IEEEOSA J Light. Technol, vol. 5, pp. 1286–1295, 1987.

[16] govind Agrawal, “Self-Phase Modulation and Spectral Broadening of Optical Pulses in Semiconductor Laser Amplifiers,” lEEE, vol. 25, 1989.

[17] Kyoung Sun Choi, “All-optical OR/NOR bi-functional logic gate by using cross-gain modulation in semiconductor optical,” Korean Phys. Soc. vol. 56, pp. 1093–1096, 2010.

[18] K. E. Stubkjaer, “Semiconductor Optical Amplifier-Based All-Optical Gates for High-Speed Optical Processing IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS,” vol. 6, Dec. 2000.

[19] S. D. Personick, “Applications for quantum amplifiers in simple digital optical communication systems 1-8,” Bell Sysr Tech J, vol. 52, pp. 117–133, 1973.

[20] Y. Yamamoto, “Characteristics of AlGaAs Fabry-Perot cavity type laser amplifiers 1-8,” IEEE J Quantum Electron, vol. QE-16, no. 10, pp. 1047–1052, 1980.

[21] Y. Yamamoto and T. Kimura, “Coherent optical fiber transmission systems 1-8,” IEEE J Quantum Electron, vol. QE-17, pp. 897–905, 1981.

[22] H. A. Steinberg, “The use of a laser amplifier in a laser communication system 1-8,” Proc IEEE, vol. 51, p. 943, 1963.

[23] G. Zeidler and and D. Schicketanz, “Use of laser amplifiers in a glass fiber communications system 1-8,” Siemens Forsch -U Entwickl, pp. 227–234, 1973.

[24] D.T. Schaafsma and E.M. Bradley, “Cross-gain modulation and frequency conversion crosstalk effects in 1550-nm gain-clamped semiconductor optical amplifiers,” IEEE Photon Technol Lett, pp. 727–729, 1999.

[25] Katsuaki Magari, “Polarization-Insensitive Optical Amplifier with Tensile-Strained-Barrier MQW Structure,” IEEE J. QUANTUM Electron. vol. 30, NO. 3, Mar. 1994.

[26] H. Soto, D. Erasme, G. C. Guekos, et a1. ““5-Gb/s XOR Optical Gate Based on Cross-Polarization Modulation in Semiconductor Optical Amplifiers 13,” IEEE Photonics Technol. Lett. vol. 13, No. 4, pp. 335–337, 2001.

[27] H. Soto, C. A. Diaz, J. Topomondzo, “All-Optical AND Gate Implementation Using Cross-Polarization Modulation in A Semiconductor Optical Amplifier 13,” IEEE Photonic Technol. Lett. vol. 14, No. 4, pp. 498–500, 2002.

[28] “Nonlinear Polarization Rotation Characteristic Phenomenon in a Bulk Semiconductor Optical Amplifier 13,” Opt. Photonics J. pp. 187–191, 2013.

[29] L. L. Yi, W.S. Hu, et al, “All-Optical Reconfigurable Multi-Logic Gates Based on Nonlinear Polarization Rota-tion Effect in A Single SOA 13,” Chin. Opt. Lett. vol. 9, No. 3, pp. 1–4, 2011.

[30] P. Morin, J. Fatome, C. Finot, “All-Optical Nonli-near Processing of Both Polarization State and Intensity Profile for 40 Gbit/s Regeneration Applications,” Optics Express 13,” vol. 19, No. 18, pp. 17158–17166, 2011.

[31] M. Cheng, C. Q. Wu, et al, “Cascaded Optical Buffer Based on Nonlinear Polarization Rotation in Semiconductor Optical Amplifiers 13,” Chin. Phys. Lett. vol. 25, No. 11, pp. 4026–4629, 2008.

[32] S. K. Garai, “A Method of Developing Frequency En-coded Multi-Bit Optical Data Comparator Using Semiconductor Optical Amplifier 13,” Opt. Laser Technolo-Gy, vol. 43, No. 1, pp. 124–131, 2011.