Optical Amplifier Design with Increased Dynamic Range Bandwidth for Optical Telecommunication Receiver Applications
Subject Areas : Electronics Engineering
reza kazerani
1
,
najmeh cheraghi shirazi
2
,
دکتر عبدالرسول Ghasemi
3
1 - department of electrical engineering, bushehr branch, Islamic Azad University, bushehr, iran
2 - department of electrical engineering, bushehr branch, islamic azad university, bushehr, iran
3 - department of electrical engineering, bushehr branch, Islamic Azad University, bushehr, iran
Keywords: Inductive peaking, Limiting Amplifier, Shunt Technique, Optical Amplifier, Transient Impedance Amplifier (TIA),
Abstract :
In this paper an optical amplifier with increased dynamic range bandwidth with inductive amplification technique, including a transient impedance amplifier (TIA) for use in an optical telecommunication system for applications with 10Gb / s data rate using CMOS18.0.0 µm technology Designed and simulated. For the proper design of a fiber optic amplifier, the design of the transient impedance amplifier is a key element of this type of amplifier so that it compromises between challenging issues such as bandwidth, gain and power consumption. Appropriate bandwidth and interest required for use in new telecommunications And transfer an image. In this paper, the inductive enhancement technique developed by the predecessor is used to improve the parameters. In this technique, the desired inductor resonates with the parasitic capacitors of the circuit and creates a peak in the circuit which increases the bandwidth and gain of the circuit. Linear Mode In certain situations, such as short-circuit optical fiber, a technique called shunt technique is used to keep the circuit in linear mode. . The simulation results show that the proposed circuit has 1.8v power supply, 57.6 mW power, 5.98GHz bandwidth and 25dBΩ output.
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[6] T. Takemoto, H. Yamashita, T. Yazaki, N. Chujo, L. Yong, Y. Matsuoka,“ A 25-to-28 Gb/s High-Sensitivity (-9.7 dBm) 65 nm CMOS Optical Receiver for Board-to-Board Interconnects ,” in IEEE JSSC, vol. 49, no. 10, pp. 2259-2276, 2014.
[7] I. Kwon, T. Kang, B. T. Wells, L. J. D'Aries, M. D. Hammig, “ A High Gain 1.75 GHz Dual Inductor Transimpedance Amplifier with Gate Noise Suppression for Fast Radiation Detection,”, IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 63, no. 4, pp. 356-360, April. 2016.
[8] Y. Jiao, and et al, “ A 70 dBΩ 2.3 GHz low noise Transimpedance Amplifier,” in proc. European Conference on Circuit Theory and Design (ECCTD), 2013, pp.71-74.
[9] S. Bashiri, and et al,“ A 40 Gb/s Transimpedance Amplifier in 65 nm CMOS,” in proc. Proceedings of IEEE International Symposium on Circuits and Systems, June. 2010, pp.174-177.
[10] A. K.-Bidhendi and et al,“ A Silicon-Based Low-Power Broadband Transimpedance Amplifier,” IEEE Transactions on CIrcuits and Systems–I: Regular papers, vol. 65, no. 2, Feb. 2018
[11] A.S. Bhuiyan and et al,“ Shunt-feedback Transimpedance Amplifier in 0.18μm CMOS Technology,” 2nd International Symposium on Instrumentation and Measurement, Sensor Network and Automation (IMSNA), Dec. 2013, pp. 64-67.
_||_[1] B. Razavi, Design of integrated circuits for optical communications. Hoboken, NJ: Wiley, 2012.
[2] S. Salhi, H. Escid,A. Slimane,“ Design of High Speed Transimpedance Amplifier for Optical Communication Systems,” in proc. Seminar on Detection Systems Architectures and Technologies, Feb. 2017,pp. 1-4.
[3] A. M. Zadeh Khaki, and et al,“ An ultra-low-power TIA plus Limiting Amplifier in 90nm CMOS technology for 2.5 Gb/s optical receiver,” in proc. 24th Iranian Conference on Electrical Engineering (ICEE), 2016, pp.224-227.
[4] L. Szilagyi, and et al,“ Optical Receiver Amplifier with Adaptive Power and Bandwidth for up to 30 Gbit/s in 28 nm CMOS,” in proc. Proceedings of the 11th European Microwave Integrated Circuits Conference, Oct. 2016, pp.110-113.
[5] D. Schoeniger, R. Henker, F. Ellinger,“ High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 μm SiGe BiCMOS,” in IET El. Letters, vol. 52, no. 2, pp. 154-156, 2016.
[6] T. Takemoto, H. Yamashita, T. Yazaki, N. Chujo, L. Yong, Y. Matsuoka,“ A 25-to-28 Gb/s High-Sensitivity (-9.7 dBm) 65 nm CMOS Optical Receiver for Board-to-Board Interconnects ,” in IEEE JSSC, vol. 49, no. 10, pp. 2259-2276, 2014.
[7] I. Kwon, T. Kang, B. T. Wells, L. J. D'Aries, M. D. Hammig, “ A High Gain 1.75 GHz Dual Inductor Transimpedance Amplifier with Gate Noise Suppression for Fast Radiation Detection,”, IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 63, no. 4, pp. 356-360, April. 2016.
[8] Y. Jiao, and et al, “ A 70 dBΩ 2.3 GHz low noise Transimpedance Amplifier,” in proc. European Conference on Circuit Theory and Design (ECCTD), 2013, pp.71-74.
[9] S. Bashiri, and et al,“ A 40 Gb/s Transimpedance Amplifier in 65 nm CMOS,” in proc. Proceedings of IEEE International Symposium on Circuits and Systems, June. 2010, pp.174-177.
[10] A. K.-Bidhendi and et al,“ A Silicon-Based Low-Power Broadband Transimpedance Amplifier,” IEEE Transactions on CIrcuits and Systems–I: Regular papers, vol. 65, no. 2, Feb. 2018
[11] A.S. Bhuiyan and et al,“ Shunt-feedback Transimpedance Amplifier in 0.18μm CMOS Technology,” 2nd International Symposium on Instrumentation and Measurement, Sensor Network and Automation (IMSNA), Dec. 2013, pp. 64-67.
