Effect of increasing laser-dressing parameter on electronic and optical properties of double GaAsSb/GaAs parabolic valence-band quantum well
Subject Areas : Research On Surface Engineering and Nanomaterials Science
Soheila Haghighi
1
(Department of Physics, Ahvaz Branch, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran)
Azadeh Haghighatzadeh
2
(Advanced Surface Engineering and Nano Materials Research Center, Department of Physics, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran)
امین عطارزاده
3
(Department of Science, Institute for Higher Education, ACECR, Ahvaz, Khouzestan, Iran)
Keywords: Heavy hole, Laser-dressing parameter, Nonlinear optical properties, Position-dependent effective mass, Quantum well,
Abstract :
In this study, electronic and optical properties of a laser-dressed double GaAsSb/GaAs parabolic valence-band quantum well were investigated. The effect of increasing laser-dressing parameter on electronic bound states and the corresponding wave functions was surveyed using the Finite Element Method (FEM) in COMSOL Multiphysics and the position-dependent effective mass approximation considering Floquet series and Kramers-Henneberger transformation. An analytical expression was developed to describe the position-dependent effective mass of a heavy hole as a function of the well's geometry for the first time. The electronic bound states of a heavy hole were studied by considering the probability density of the presence in the quantum well. The obtained electronic results showed a transition from a double quantum well with a zero barrier-width into a triple-type profile after the application of the laser field, and then a return into a double-type well with a wide central barrier as the laser-dressing parameter increased. The linear and the third-order nonlinear optical absorption coefficients and refraction index were studied by density matrix method taking into account a two-level system for the ground and the first-excited states.
[1] T.S. Wang, J.T. Tsai, K.-I. Lin, J.-S. Hwang, H.H. Lin, L.C. Chou, Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells, Mater. Sci. Eng. B. 147 (2008) 131–135.
[2] J. Todorovic, H. Kauko, L. Ahtapodov, A.F. Moses, P. Olk, D.L. Dheeraj, B.O. Fimland, H. Weman, A.T.J. Van Helvoort, The effects of Sb concentration variation on the optical properties of GaAsSb/GaAs heterostructured nanowires, Semicond. Sci. Technol. 28 (2013) 115004.
[3] X. Wen, A. Arabhavi, W. Quan, O. Ostinelli, C. Mukherjee, M. Deng, S. Frégonèse, T. Zimmer, C. Maneux, C.R. Bolognesi, Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications, J. Appl. Phys. 130 (2021) 34502.
[4] A. Sharma, T.D. Das, Electronic band structure and optical properties of GaAsSb/GaAs for optoelectronic device applications: A 14 band k.p study, Opt. Mater. (Amst). 112 (2021) 110734.
[5] W.-P. Hong, S.-H. Park, Optical anisotropy in type-II (110)-oriented GaAsSb/GaAs quantum wells, Solid State Commun. 314 (2020) 113934.
[6] X. Gao, X. Fang, J. Tang, D. Fang, D. Wang, X. Wang, R. Chen, S. Xu, Z. Wei, The strain, energy band and photoluminescence of GaAs0. 92Sb0.08/Al0. 3Ga0. 7As multiple quantum wells grown on GaAs substrate, Solid State Commun. 309 (2020) 113837.
[7] U. Yesilgul, F.A.T.H. Ungan, E.B. r Al, E.S.N. Kasapoglu, H.N. Sari, I. Sökmen, Effects of magnetic field, hydrostatic pressure and temperature on the nonlinear optical properties in symmetric double semi-V-shaped quantum well, Opt. Quantum Electron. 48 (2016) 1–11.
[8] A.K. Panda, S.K. Palo, N. Sahoo, T. Sahu, Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure, Philos. Mag. 100 (2020) 512–527.
[9] X. Li, Y. Li, H. Wang, W. Liu, J. Fu, Electro-optical control of spin-orbit coupling in AlInAs/GaInAs single and double quantum wells, Phys. Lett. A. 494 (2024) 129280.
[10] A. Shaer, M.B. Yücel, E. Kasapoglu, Hydrostatic pressure and temperature dependent optical properties of double inverse parabolic quantum well under magnetic field, Phys. B Condens. Matter. (2024) 416057.
[11] J. Wang, K. Guo, Energy spectrum and optical properties in a double parabolic quantum ring: Effects of the impurity, the magnetic field and the spin-orbit interaction, Opt. Laser Technol. 174 (2024) 110576.
[12] N.A. Althumairi, Optical rectification and second harmonic generation in CdSe/MgSe asymmetric double quantum wells, Heliyon. 10 (2024).
[13] A.N. Ikot, I.B. Okon, U.S. Okorie, E. Omugbe, A.-H. Abdel-Aty, L.F. Obagboye, A.I. Ahmadov, N. Okpara, C.A. Duque, H.Y. Abdullah, Exact solutions of position-dependent mass Schrodinger equation with pseudoharmonic oscillator and its thermal properties using extended Nikiforov-Uvarov method, Zeitschrift Für Angew. Math. Und Phys. 75 (2024) 18.
[14] S.M. Nagiyev, A.M. Jafarova, E.I. Jafarov, The Wigner function of a semiconfined harmonic oscillator model with a position-dependent effective mass, J. Math. Phys. 65 (2024).
[15] E. Kasapoglu, M.B. Yücel, C.A. Duque, M.E. Mora-Ramos, Simultaneous effects of the position dependent mass and magnetic field on quantum well with the improved Tietz potential, Phys. B Condens. Matter. (2024) 415797.
[16] S.E. Okan, H. Akbas, S. Aktas, M. Tomak, Binding energies of helium-like impurities in parabolic quantum wells under an applied electric field, Superlattices Microstruct. 28 (2000) 171–176.
[17] E.C. Niculescu, L.M. Burileanu, Nonlinear optical absorption in inverse V-shaped quantum wells modulated by high-frequency laser field, Eur. Phys. J. B. 74 (2010) 117–122.
[18] A. Haghighatzadeh, A. Attarzadeh, A. Salman Durmuslar, E.B. Al, F. Ungan, Modeling of electronic spectra and optical responses of a semiconductor AlGaAs/GaAs quantum well with three-step barriers: the role of external perturbations and impurity, Eur. Phys. J. Plus. 139 (2024) 353.
[19] S. Maleki, A. Haghighatzadeh, A. Attarzadeh, Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling, J. Nanophotonics. 18 (2024) 26001.
[20] M. Sayrac, H. Dakhlaoui, W. Belhadj, F. Ungan, Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well, Eur. Phys. J. Plus. 139 (2024) 1–10.
[21] T. Sahu, A.K. Panda, S. Palo, Parabolic double quantum well structures: Study of multisubband electron mobility, in: 2012 Int. Conf. Emerg. Electron., IEEE, 2012: pp. 1–4.
[22] J. Zhang, J. Tang, Y. Kang, F. Lin, D. Fang, D. Wang, X. Fang, X. Wang, Z. Wei, Structural and spectroscopy characterization of coaxial GaAs/GaAsSb/GaAs single quantum well nanowires fabricated by molecular beam epitaxy, CrystEngComm. 21 (2019) 4150–4157.
[23] M. Levinshtein, Handbook series on semiconductor parameters, World Scientific, 1997.
[24] A. Radu, Laser-dressing of electronic quantum states in graded semiconductor nanostructures, Solid State Commun. 157 (2013) 11–15.
[25] F.A.T.H. Ungan, S. Pal, M.K. Bahar, M.E. Mora-Ramos, Nonlinear optical properties of morse quantum well modulated by THz laser fields, Phys. E Low-Dimensional Syst. Nanostructures. 113 (2019) 86–91.
[26] F. Ungan, U. Yesilgul, S. akiro lu, E. Kasapoglu, A. Erol, M.C. Arikan, H. Sar, I. Sökmen, Effects of an intense, high-frequency laser field on bound states in Ga1- xInxNyAs1- y/GaAs double quantum well, Nanoscale Res. Lett. 7 (2012) 606.
[27] A. Radu, E.C. Niculescu, M. Cristea, Laser dressing effects on the energy spectra in different shaped quantum wells under an applied electric field, J Optoelectron Adv Mater. 10 (2008) 2555.
[28] F.M.S. Lima, M.A. Amato, O.A.C. Nunes, A.L.A. Fonseca, B.G. Enders, E.F. da Silva Jr, Unexpected transition from single to double quantum well potential induced by intense laser fields in a semiconductor quantum well, J. Appl. Phys. 105 (2009) 123111.
[29] J.A. Vinasco, A. Radu, E. Niculescu, M.E. Mora-Ramos, E. Feddi, V. Tulupenko, R.L. Restrepo, E. Kasapoglu, A.L. Morales, C.A. Duque, Electronic states in GaAs-(Al, Ga) As eccentric quantum rings under nonresonant intense laser and magnetic fields, Sci. Rep. 9 (2019) 1–17.
[30] J.A. Osorio, D. Caicedo-Paredes, J.A. Vinasco, A.L. Morales, A. Radu, R.L. Restrepo, J.C. Martínez-Orozco, A. Tiutiunnyk, D. Laroze, N.N. Hieu, Pyramidal core-shell quantum dot under applied electric and magnetic fields, Sci. Rep. 10 (2020) 1–14.
[31] A.B. COMSOL, COMSOL multiphysics® v. 5.4 reference manual. Stockholm, Sweden, (2019).
[32] C. Multiphysics, Comsol Multiphysics Reference Guide COMSOL, Inc., Burlington, MA, USA. (2012).
[33] C. Multiphysics, C. Module, COMSOL multiphysics user’s guide, Version: COMSOL Multiphysics. 3 (2014).
[34] U. Yesilgul, F. Ungan, S.L. Sakiroglu, M.E. Mora-Ramos, C.A. Duque, E.S.N. Kasapoglu, H. Sar, I. Sӧkmen, Effect of intense high-frequency laser field on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes in a parabolic quantum well under the applied electric field, J. Lumin. 145 (2014) 379–386.
[35] E.S.N. Kasapoglu, H. Sari, I. Sӧkmen, J.A. Vinasco, D. Laroze, C.A. Duque, Effects of intense laser field and position dependent effective mass in Razavy quantum wells and quantum dots, Phys. E Low-Dimensional Syst. Nanostructures. 126 (2021) 114461.
[36] E.S.N. Kasapoglu, F. Ungan, U. Yesilgul, The effects of the intense laser field on the optical properties of the asymmetric parabolic quantum well, Opt. Quantum Electron. 49 (2017) 175.
[37] B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr, An energy relaxation time model for device simulation, Solid. State. Electron. 43 (1999) 1791–1795.
[38] E.B. Al, E. Kasapoglu, H.N. Sari, I. Sӧkmen, Optical properties of spherical quantum dot in the presence of donor impurity under the magnetic field, Phys. B Condens. Matter. 613 (2021) 412874.
[39] J. Lao, K. Guo, J. Lan, X. He, Influence of terahertz field on optical absorption coefficients and refractive index changes in double semi-V-shaped quantum wells, JOSA B. 37 (2020) 2308–2313.
[40] R. En-nadir, H. El Ghazi, W. Belaid, A. Jorio, I. Zorkani, Intraconduction band-related optical absorption in coupled (In, Ga) N/GaN double parabolic quantum wells under temperature, coupling and composition effects, Results Opt. 5 (2021) 100154.
[41] N. Sahoo, A.K. Sahu, S.K. Palo, Electron mobility in asymmetric coupled AlxGa1-xAs parabolic quantum well structure-Impact of external electric field, Phys. B Condens. Matter. 608 (2021) 412798.
