فهرس المقالات I-V character

• حرية الوصول المقاله
  • صفحة الملخص
  • نص كامل
  
  1 - DFT comparison of structural and electronic properties of (5, 0) zig-zag GaAs nanotube and (5, 0) zig-zag GaSb nanotube
  Monir Kamalian
  10.22034/jna.2020.1905960.1222
  The structural, electronic and transport properties of the (5, 0) zig-zag GaAs nanotube and (5, 0) zig-zag GaSb nanotube have been studied using Density Functional Theory (DFT) combined with Non-Equilibrium Green’s Function (NEGF) formalism with TranSIESTA software. Th أکثر

  The structural, electronic and transport properties of the (5, 0) zig-zag GaAs nanotube and (5, 0) zig-zag GaSb nanotube have been studied using Density Functional Theory (DFT) combined with Non-Equilibrium Green’s Function (NEGF) formalism with TranSIESTA software. The electronic band structure (EBS), density of states (DOS), band gap (BG), current-voltage (I-V) characteristics and quantum conductance curves (dI/dV) of these two structures were studied under low-bias conditions. The obtained results demonstrate that these two structures exhibit semiconducting behaviour but the (5, 0) zig-zag GaSb nanotube has a smaller band gap and the highest value of the electron density of states, hence it is an important candidate in the field of infrared-radiation detectors, resonant tunnelling devices and laser diodes. Instead the (5, 0) zig-zag GaAs nanotube showed the amazing property of Negative Differential Resistance (NDR) that it has played a vital role in high frequency oscillators, reflection amplifiers, memories and switching devices تفاصيل المقالة