فهرس المقالات Electron-Hole Bilayer Tunnel Field Effect Transistor حرية الوصول المقاله صفحة الملخص نص كامل 1 - Performance Analysis of InAs/AlGaSb Heterojunction Electron-Hole Bilayer Tunnel Field Effect Transistor for Low-Power High-Speed Digital Computing Zahra Ahangari 10.30495/ijsee.2023.1988303.1268