Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction

Subject Areas : Journal of Optoelectronical Nanostructures

Morteza Rahimian ¹

1 - Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran

Received: 2023-07-05 Accepted : 2023-12-01 Published : 2023-11-01

Keywords: Band-to-band tunneling (BTBT), Tunneling barrier width, Off-state current, Ambipolarity, Junctionless TFET, 2D simulation,

Abstract :

Abstract:
A detailed study of a novel configuration for junctionless tunneling FET (J-TFET) with extremely low off- (I_off) and ambipolar current (I_amb) is reported in this paper. In order to achieve desirable on/off current ratio (I_on/I_off), we have employed voltage difference technique on the gate electrode based on the potential distribution benefits. Main and side gates with an optimum voltage difference creates a stepped potential profile along the channel. This raises the drain side’s bands, reduces the electric field, puts restriction on the flow of charge carriers, and finally remarkable reduction of I_amb from 6.52×10^-10 A/µm to 1.14×10^-17 A/µm. Also an extremely low subthreshold swing (SS) (22 mV/dec) is achieved thanks to the sharp transition from off- to the on-state. Finally we have investigated the electrical performance of the proposed device for sub-30 nm channel length to examine its immunity against short channel effects. Therefore, our approach renders the novel structure more desirable for the future low power applications. 

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