فهرس المقالات Alireza Hojabri


  • المقاله

    1 - Annealing temperature effect on the properties of untreated and treated copper films with oxygen plasma
    Journal of Theoretical and Applied Physics , العدد 1 , السنة 0 , تابستان 2014
    AbstractIn this work, the copper films were deposited on quartz substrates by DC magnetron sputtering method and then, the prepared films were annealed in air atmosphere at different annealing temperatures. Before annealing, some of the copper films, treated by oxygen p أکثر
    AbstractIn this work, the copper films were deposited on quartz substrates by DC magnetron sputtering method and then, the prepared films were annealed in air atmosphere at different annealing temperatures. Before annealing, some of the copper films, treated by oxygen plasma, for comparison of the results. The structural and morphological properties of the films have been investigated using X-ray diffraction (XRD), atomic force microscopy, and four point probe techniques. XRD results exhibited that the cuprous oxide phase changes to cupric oxide by enhancing of annealing temperatures. Also, oxygen plasma treatment can cause the better crystallinity for the prepared copper oxide films. The results confirm that oxygen plasma treatment, affected the crystal size, grain size, average roughness, sheet resistivity and strain of the films. The optical characteristics of the oxygen plasma treated films, such as refractive index, extinction coefficient and absorption coefficient were calculated by straight forward method proposed by Swanepoel using transmittance measurements. Moreover it was found that annealing temperature augmentation lead to decrease the optical band gap energy calculated using Tauc’s relation from 2.45 to 1.80 eV. تفاصيل المقالة

  • المقاله

    2 - Investigation of nitrogen plasma effect on the nonlinear optical properties of PMMA
    Journal of Theoretical and Applied Physics , العدد 1 , السنة 0 , زمستان 2012
    Abstract Effects of low power direct current nitrogen plasma on linear and nonlinear optical properties of red BS dye-doped poly(methyl methacrylate) (PMMA) film are studied employing different optical techniques. From spectrometry data, it is shown that applying plasma أکثر
    Abstract Effects of low power direct current nitrogen plasma on linear and nonlinear optical properties of red BS dye-doped poly(methyl methacrylate) (PMMA) film are studied employing different optical techniques. From spectrometry data, it is shown that applying plasma in such a low range of power does not affect the linear absorption coefficient, linear refractive index, and optical bandgap of this dye-doped polymer; however, nonlinear parameters are changed. Experiments are performed using the second harmonic of a continuous Nd-Yag laser beam at a 532-nm wavelength and 20-mW power. The effect of nonlinear refractive index of red BS dye-doped PMMA film in broadening the laser beam is observed. The optical bleaching behavior is investigated by measurement of the intensity of laser beam through the sample. Its third-order nonlinearity is measured using close and open Z-scan data. Nonlinear absorption coefficient and refractive index, as well as real and imaginary parts of the third-order nonlinear optical susceptibility χ3, are changed significantly due to plasma treatment. PACS: 42.65.-k: 42.65.An: 42.70.Jk: 61.41. + e: 71.35.Cc. تفاصيل المقالة

  • المقاله

    3 - Structural and optical properties of nanocrystalline α-MoO3 thin films prepared at different annealing temperatures
    Journal of Theoretical and Applied Physics , العدد 1 , السنة 0 , زمستان 2015
    AbstractNanocrystalline α-MoO3 thin films were prepared successfully by thermal annealing of molybdenum (Mo) thin films deposited on quartz and silicon substrates using DC magnetron sputtering method. The influence of annealing temperatures ranging from 400 to 1,000 °C أکثر
    AbstractNanocrystalline α-MoO3 thin films were prepared successfully by thermal annealing of molybdenum (Mo) thin films deposited on quartz and silicon substrates using DC magnetron sputtering method. The influence of annealing temperatures ranging from 400 to 1,000 °C on the structural, morphological and optical properties of the prepared films was investigated by X-ray diffraction, Fourier transform infrared spectrophotometer (FTIR) atomic force microscopic and UV–vis spectroscopy, respectively. The results show that the crystallinity and surface morphology of the films are strongly dependent on the annealing temperature. Also, the optimum annealing temperature of Mo films in our experiment was 600 °C and the films formed at this temperature exhibit only the (0k0) reflections and indicated the layered structure of α-MoO3. The FTIR spectra confirm the formation of MoO3. The transmittance of the MoO3 films on quartz substrate was improved with increasing annealing temperature. تفاصيل المقالة

  • المقاله

    4 - Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates
    Journal of Theoretical and Applied Physics , العدد 1 , السنة 0 , تابستان 2016
    AbstractZirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing ti أکثر
    AbstractZirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60–240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel’s method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time. تفاصيل المقالة