In this study, a SiGe (Si(1-X) GeX x=0.1) thin film solar cell structure based on the carbon nanotube charge collector (CNT) is investigated. The addition of the carbon nanotube layer to cell structure has been proven to change aspects of its physical characteristics, specifically the efficiency of the solar cell. This means that CNT can have a significant impact on structure. The efficiency of suggested structure is 27.72%, which is higher than conventional structures without CNT layer. We optimize this structure by varying the cell layers thickness and calculating the ratio of the top metal contact to the total cell width. Furthermore, the performance of this cell is considering in present of two types of CNT layers with sheet resistances of 128Ω/□ and 76Ω/□. According to numerical simulation CNT layer with 128 Ω/□ sheet resistance has better performance parameters. Finally, the number of metal electrodes above the cell is optimized due to the shading effect and we show that the contact distance in the presence of CNT layer can be increased up to 1000 μm. The cell efficiency after this optimization reaches 30.9%. تفاصيل المقالة

در این مقاله ، ساختاری از سلول خورشیدی فیلم نازک SiGe بر اساس
نانولوله کربنی (CNT) ارائه شده است. ما طراحی و شبیه سازی دستگاه را با استفاده از
Silvaco TCAD ارائه می دهیم. مدل سازی ساختار سلول خورشیدی فیلم نازک SiGe مبتنی بر CNT
انجام شده و سپس با ساختار سلول خورشیدی فیلم نازک SiGe مقایسه می شود.
نتایج حاصل از شبیه سازی عددی نشان می دهد که سلول خورشیدی فیلم نازک SiGe مبتنی بر CNT
دارای پارامترهای بهتری مانند جریان اتصال کوتاه ، ولتاژ مدار باز ، ضریب پر کردن ،
حداکثر توان و کارایی در مقایسه با ساختارهای قبلی است.
نتایج شبیه سازی همچنین ثابت می کند که بازده 40.36٪ افزایش می یابد. تفاصيل المقالة

Abstract: Recently, various outstanding two-dimensional (2D) semiconductors have been studied. Some experimental and theoretical research works reveal that 2D-HfS₂ can be a good candidate to substitute with the silicon in nanoelectronics due to its acceptable band gap. First, the influence of different edge atoms i.e. H (hydrogen) and O (oxygen) on two zigzag and armchair HfS₂ nanoribbons is investigated with the first principle calculations.  Second, various types of vacancy defects such as 1Hf, 2Hf, 1S, 2S-1, 2S-2, 2S-3, 3S-1, 3S-2, 6S, and 1Hf+1S are applied to the pristine zigzag and armchair nanoribbon structures to investigate their electronic and transport behaviors changes. The calculated results reveal that all edge passivated structures are stable while the edge passivated structures with hydrogen atoms are more energy favorable. Moreover, some zigzag defective structures behave as metal while the armchair ones are semiconductor. The electronic property of HfS₂ material is promising for its future applications in nanoelectronics. تفاصيل المقالة