Given the significance of carefully analyzing
the critical range for processing parameters in a
sputtering system prior to experiments, as well as their
effect on the quality of the deposited thin film, this
crucial subject has been simulated and res
أکثر
Given the significance of carefully analyzing
the critical range for processing parameters in a
sputtering system prior to experiments, as well as their
effect on the quality of the deposited thin film, this
crucial subject has been simulated and researched in this
research. Argon glow discharge conditions were obtained
by altering essential processing factors such as electrode
spacing, working pressure, and DC voltage delivered to
the electrodes. The effect of changing these processing
parameters on the potential difference and electric field
profiles, ion- and electron-density, ion- and electronkinetic
energy, and cross-section of fundamental
processes has been investigated to study the deposition
rate and microstructural characteristics of thin films.
Furthermore, the cross-section of fundamental ions-andelectron
collision processes like ionization, elastic
scattering, excitation, and charge exchange has been
investigated.
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