To enhance lasers’ power and improve their performance, a model was
applied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, which
is much easier to implement. The conventional and new laser structures were
theoretically investigated using simulation software PICS3D, which self-consistently
combines 3D simulation of carrier transport, self-heating, and optical waveguiding.
Excellent agreement between simulation and experimental results was obtained by
careful adjustment of the material parameter in the physical model. Numerical
simulation results demonstrate that the new waveguide structure can efficiently increase
the output power, lower the threshold current, and improve the slope efficiency, which
is simply applicable to any kind of InGaN edge emitting lasers. Flatten band gap in the
p-side of the InGaN laser diode in new laser structure resulted in an increase in the hole
current density in the quantum well while simultaneously the electron confinement in
the active region was effectively created, leading to the increased stimulated
recombination rate. Furthermore, optical mode-overlap with heavily p-doped was
declined, which is the main reason for a better performance of InGaN laser diode. تفاصيل المقالة