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  • المقاله

    1 - Control-ability of refractive index sensor based on Plasmonic Induced Transparency in Graphene meta-material
    journal of Artificial Intelligence in Electrical Engineering , العدد 4 , السنة 9 , پاییز 2020
    In the current study, the refractive index sensor based on Plasmonic Induced Transparency which is composed of graphene meta-material has been investigated. In this sensor one graphene flat layer has been employed it is worth mentioning that two rods have come out of it أکثر
    In the current study, the refractive index sensor based on Plasmonic Induced Transparency which is composed of graphene meta-material has been investigated. In this sensor one graphene flat layer has been employed it is worth mentioning that two rods have come out of it Plasmonic Induced Transparency was examined by means of symmetry failure. In addition, through using an important feature of graphene in controlled electrical conductivity by changing the voltage range of the frequency range, the Plasmonic Induced Transparency is controlled, besides light slowing was increased to 690. Its sensitivity is 14.88 um/RIU. The structural shape value is calculated as 48. This nanostructure, in addition to its bio-sensing capabilities, can be used for light slowing, optical switches, modulators.Keywords: Biosensor, graphene, light slowing, controllability, Plasmon induced transparency. تفاصيل المقالة

  • المقاله

    2 - High Detectivity in GaN Self –Assembled QDIP at room temperature
    journal of Artificial Intelligence in Electrical Engineering , العدد 4 , السنة 10 , پاییز 2021
    In this paper, we present a self-assembled (pyramidal shaped) QDIPs, which operates in the long wavelength IR. A pyramidal shaped 6×6×3 𝑛𝑚 GaN quantum dot (QD) in a large rectangular cube box of 18×18×9 𝑛𝑚 dimensions. Solves single-band effec أکثر
    In this paper, we present a self-assembled (pyramidal shaped) QDIPs, which operates in the long wavelength IR. A pyramidal shaped 6×6×3 𝑛𝑚 GaN quantum dot (QD) in a large rectangular cube box of 18×18×9 𝑛𝑚 dimensions. Solves single-band effective mass Schrödinger equation for the gamma conduction band in order to calculate the QD electronic structure. The temperature dependence of the dark current was shown and the amount of dark current at room temperature was equal to 1×〖10〗^(-2) A, which is an acceptable value. The pyramidal GaN QDs has demonstrated exceptionally low dark current, and high detectivity. Detectivity up to 4×〖10〗^9 cm√Hz/W, at room temperature will be the strength of this research. تفاصيل المقالة