A Review of Single Electron Transistors
الموضوعات :Yaghoob Mohammadmoradi 1 , Nader Javadifar 2 , Atila Skandarnezhad 3
1 - Department of physics, Aliabad Katoul Branch, Islamic Azad University, Aliabad Katoul, Iran
2 - Department of Electrical Engineering , Aliabad Katoul Branch,Islamic Azad University, Aliabad Katoul ,Iran
3 - Department of Electrical Engineering , Aliabad Katoul Branch,Islamic Azad University, Aliabad Katoul ,Iran
الکلمات المفتاحية: Coulomb blockade, Single Electron Transistor, Electron tunneling, Coulomb staircase,
ملخص المقالة :
The single electron transistor (SET) is an effectual device to quantize current. It has been highly considered as the most fundamental single-electron device in the research field of nanotechnology. An electron from the single electron transistor (SET) is a pivotal element in the research field of nanotechnology. This type of transistor with very low power consumption and high-performance speed is considered as a nano-scaled switching device that can control the motion of a single electron. The principles of SET and some of its applications are discussed in this paper. In this research paper, we also focus on some basic device characteristics like ‘Coulomb blockade’, single electron tunneling effect & ‘Coulomb staircase’ on which this Single electron transistor [SET] works and the basic comparison of SET characteristics and also its [SET] advantages as well as disadvantages to make a clear picture about the reason behind its popularity in the field of nanoelectronics.
[1] S. Goyal and A. Tonk, A Review towards Single Electron Transistor, Int. J. Adv. Res. Comput. Commun. Eng. 4, 36-39, 2015.
[2] O. Vince, A Brief Introduction to Single Electron Transistors, 1-6, 2011.
[3] K.K. Likharev, Single-electron devices and their applicatios, Proc, IEE 87, 606-632, 1999.
[4] S. S. Khakhkhar, Computer Engineering a Comparative Studyof Macro of Single Electron Transistor, Jornal of information, Knowledge and research in computer engineering 2, 428-432, 2012
[5] O. Kumar and M. Kaur, Single Electro Transistor: Applications & Problems, Int. J. VLSI Des. Commun. Syst. 1, 24-29, 2010.
[6] L. Esaki, New phenomenon in Narrow Germanium p-n Junctions, “ Phys. Rev. 109, 603-604, 1958.
[7] Shilpa Goyal, Anu Tonk, “A Review towards Single Electron Transistor (SET)”, International Journal of Advanced Research in Computer and Communication Engineering Vol. 4, Issue 5, May 2015
[8] Varun Mittal, “Basic introduction to Single Electron Transistor,” IJRASET, ISSN: 2321-9653 Vol. 1 Issue I, August 2013
[9] I. Giaever and H . R. Zeller, Superconductivity of Small Tin Particles Measured by Tunneling, Phys. Rev. Lett. 20, 1504-1507, 1968.
[10] A. E. Hannna and M. Tinkham (1991). “Variation of the Coulomb staircase in a two-junction system by fractional electron charge.” Physical Review B 44: 5919.
[11] Radha Krishnan, “Single Electron Transistors”, International Journal of Scientific & Engineering Research, ISSN 2229-5518, Volume 5, Issue 9, Sep2014
[12] A. Venkataratnam and A. K. Goel, “Design and simulation of Logic Circuits with Hybrid Archietectures of Single Electron Transistors and Conventional Devices”, U.S. Army Research Laboratories, 2006 IEEE.
[13] V. Singh, A. Agrawal, and S. Singh, Analytical Discussion of Single Electron Transistor (SET), Int. J. Soft Comput. Eng. 2, 504-507, 2012.
[14] Varun Mittal, “Basic introduction to Single Electron Transistor,” IJRASET, ISSN: 2321-9653 Vol. 1 Issue I, August 2013.
[15] Radha Krishnan, “Single Electron Transistors”, International Journal of Scientific & Engineering Research, ISSN 2229-5518, Volume 5, Issue 9, Sep2014.
[16] Om Kumar and Manjit Kaur, “Single electron Transistor: Applications & Problems”, International Journal of VLSI Design and Communication Systems, (VLSICS) Vol.1, No.4, December 2010.
