Performance Optimization and Sensitivity Analysis of Junctionless FinFET with Asymmetric Doping Profile
الموضوعات : Journal of Nanoanalysis
Zahra Ahangari
1
(Yadegar-e-Imam Khomeini (RAH) Shahre Rey Branch, Islamic Azad University, Tehran, Iran. E-mail: z.ahangari@iausr.ac.ir; z.ahangari@gmail.com)
Ehsan Asadi
2
(Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey
Branch, Islamic Azad University, Tehran, Iran)
Seied Ali Hosseini
3
(Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey
Branch, Islamic Azad University, Tehran, Iran)
الکلمات المفتاحية: Sensitivity analysis, Gate Workfunction, Transistor, FinFET, Short channel effects, Junctionless field effect,
ملخص المقالة :
In this paper, a novel junctionless fin field effect transistor (FinFET) withasymmetric doping profile along with the device from source to drain (ADJFinFET)is introduced and the electrical characteristics of the device are comprehensivelyassessed. Unlike the conventional junctionless FinFET, ADJFinFET has lowerchannel doping density with respect to the adjacent source and drain regions,which provides superior electrical performance in nanoscale regime. The impactof device geometry and physical design parameters on the device performanceare thoroughly investigated via calculating standard deviation over mean valueof main electrical measures. The sensitivity analysis reveals that metal gateworkfunction, doping density and fin width are critical design parameters thatmay fundamentally modify the device performance. Furthermore, 2D variationmatrix of gate workfunction and channel doping density is calculated foroptimizing the device performance in terms of off-state and on-state current. Theresults demonstrate that the proposed device establishes a promising candidateto realize the requirements of low-power high-performance integrated circuits.
