Modeling Graphene-based PIN-FET with Quantum Dot Channel

الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی

Karim Milanchian ¹ (Department of Physics, Payame Noor University, Tehran, Iran)
Hakimeh Mohammadpour ² (Department of Physics, Faculty of Basic Sciences, Azarbaijan Shahid Madani University, 53714-161 Tabriz, Iran)

تاريخ الإرسال : 06 السبت , ذو الحجة, 1444 تاريخ التأكيد : 21 الثلاثاء , جمادى الأولى, 1445 تاريخ الإصدار : 17 الأربعاء , ربيع الثاني, 1445

الکلمات المفتاحية: Graphene, Quantum Dot, FET, NEGF,

ملخص المقالة :

Abstract: Discrete energy levels of quantum dots (QD) have electronic and optoelectronic applications. In this paper, a novel graphene nanoribbon (GNR) field effect transistor (FET) is modeled numerically using the NEGF formalism. In the new device model of this paper, the channel region is composed of one or two QDs, made by only one metallic gate electrode. This model utilizes a semiconductor armchair graphene nanoribbon through which the current may pass. The two highly doped ends of GNR act as source and drain contacts. At this unique model, one or two quantum dots form on GNR channel.  The discreteness of energy levels of the two coupled quantum dots, revealed by applying gate voltage, gives rise to resonant tunneling.  Resonant tunneling through these levels results in negative differential conductance. The coupling between QDs determines the current characteristics of device. Step-wise increment of current by increasing drain voltage manifests QDs discrete energy levels.

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