The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot

الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی

MohammadAmin ZekavatFetrat ¹ , Mohammad Sabaeian ² , Ghahraman Solookinejad ³

1 - Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
2 - Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, Iran Center for Research on Laser and Plasma, Shahid Chamran University of Ahvaz, Ahvaz, Iran
3 - Center for Research on Laser and Plasma, Shahid Chamran University of Ahvaz, Ahvaz, Iran

تاريخ الإرسال : 02 الجمعة , ربيع الأول, 1443 تاريخ التأكيد : 19 الأربعاء , ربيع الثاني, 1443 تاريخ الإصدار : 22 الأحد , ذو الحجة, 1442

الکلمات المفتاحية: Quantum Dot, Linear and Nonlinear Susceptibility, Ambient Temperature,

ملخص المقالة :

In this work, we calculated the energy levels of truncated
pyramidal-shaped InAs/GaAs QDs by using the finite
element method by taking into account the ambient
temperature, because the system under study is not
symmetric, it is impossible to use the analytical method
to find the wave functions and energy levels of the
electron, and the finite element method is the solution to
such problems. We showed that, with increasing the
temperature, the energy level of both the ground state and
the first excited state as well as S-to-P transition
frequency increase. But the important point was that,
increasing the temperature can shift linear and nonlinear
susceptibility graphs to higher frequencies. For example,
for a pyramid with a base length of 25 nm and a height of
5 nm, at zero and 500 K the maximum linear and
nonlinear susceptibility values are shifted from 14
terahertz to the 18 terahertz. This ability can be effective
in designing optical devices.

المصادر:

         García de Arquer, F.P., et al., Semiconductor quantum dots: Technological progress and future challenges. Science, (2021). 373(6555), eaaz8541. https://doi.org/10.1126/science.aaz8541

[2]    Jung, H., N. Ahn, and V.I. Klimov, Prospects and challenges of colloidal quantum dot laser diodes. Nature Photonics, 15(9) (2021) 643-655. https://doi.org/10.1038/s41566-021-00827-6

[3]    Lv, Z., et al., Semiconductor quantum dots for memories and neuromorphic computing systems. Chemical reviews, 120(9) (2020) 3941-4006. https://doi.org/10.1021/acs.chemrev.9b00730

[4]    Kagan, C.R., et al., Colloidal quantum dots as platforms for quantum information science. Chemical Reviews, 121(5) (2020) 3186-3233. https://doi.org/10.1021/acs.chemrev.0c00831

[5]    Van Dyke, J.S., et al., Protecting quantum information in quantum dot spin chains by driving exchange interactions periodically. Physical Review B, 103(24) (2021) 245303. https://doi.org/10.1103/PhysRevB.103.245303

]6]    Yahyazadeh, R. and Z. Hashempour, Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells. Journal of Optoelectronical Nanostructures, 6(2) (2021) 1-22. https://dx.doi.org/10.30495/jopn.2021.27941.1221

[7]    Jafari, S.N., A. Ghadimi, and S. Rouhi, Strained Carbon Nanotube (SCNT) thin layer effect on GaAs solar cells efficiency. Journal of Optoelectronical Nanostructures, 5(4) (2020). http://jopn.miau.ac.ir/article_4505.html

[8]    Yahyazadeh, R. and Z. Hashempour, Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N/GaN Multiple Quantum Well Solar Cells. Journal of Optoelectronical Nanostructures, 5(3) (2020) 81-102. http://jopn.miau.ac.ir/article_4406.html

[9]    Cheraghizade, M., Optoelectronic properties of PbS films: Effect of carrier gas. Journal of Optoelectronical Nanostructures, 4(2) (2019) 1-12. http://jopn.miau.ac.ir/article_3474.html

[10] Sefidgar, Y., H. Rasooli Saghai, and H. Ghatei Khiabani Azar, Enhancing Efficiency of Two-bond Solar Cells Based on GaAs/InGaP. Journal of Optoelectronical Nanostructures, 4(2) (2019) 83-102. http://jopn.miau.ac.ir/article_3480.html

[11] Izadneshan, H., V. Gremenok, and G. Solookinejad, Fabrication of Cu (In, Ga) Se2 solar cells with In2S3 buffer layer by two stage process. Journal of Optoelectronical Nanostructures, 1(2) (2016) 47-56. http://jopn.miau.ac.ir/article_2048_0.html

[12] Masumoto, Y. and T. Takagahara, Semiconductor quantum dots: physics, spectroscopy and applications. (2013): Springer Science & Business Media. https://link.springer.com/book/10.1007%2F978-3-662-05001-9

[13] Tartakovskii, A., Quantum dots: optics, electron transport and future applications. (2012). https://www.cambridge.org/ir/academic/subjects/physics/condensed-matter-physics-nanoscience-and-mesoscopic-physics/quantum-dots-optics-electron-transport-and-future-applications?format=HB&isbn=9781107012585

[14] Rana, M., et al., Glutathione capped core/shell CdSeS/ZnS quantum dots as a medical imaging tool for cancer cells. Inorganic Chemistry Communications, 112 (2020) 107723. https://doi.org/10.1016/j.inoche.2019.107723

[15] Sabaeian, M. and A. Khaledi-Nasab, Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer. Applied Optics, 51(18) (2012) 4176-4185. https://doi.org/10.1364/AO.51.004176

[16] Shahzadeh, M. and M. Sabaeian, The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots. AIP Advances, 4(6) (2014) 067113. https://doi.org/10.1063/1.4896510

[17] Sabaeian, M. and M. Shahzadeh, Investigation of in-plane-and z-polarized intersubband transitions in pyramid-shaped InAs/GaAs quantum dots coupled to wetting layer: Size and shape matter. Journal of Applied Physics, 116(4) (2014) 043102. https://doi.org/10.1063/1.4891252

[18] Sabaeian, M. and M. Riyahi, Truncated pyramidal-shaped InAs/GaAs quantum dots in the presence of a vertical magnetic field: An investigation of THz wave emission and absorption. Physica E: Low-dimensional Systems and Nanostructures, 89 (2017) 105-114. https://doi.org/10.1016/j.physe.2017.02.008

[19] Baskaran, A. and P. Smereka, Mechanisms of stranski-krastanov growth. Journal of Applied Physics, 111(4) (2012) 044321. https://doi.org/10.1063/1.3679068

[20] Gajjela, R.S., et al., Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots. Light: Science & Applications, 10(1) (2021) 1-13. https://doi.org/10.1038/s41377-021-00564-z

[21] Choubani, M., H. Maaref, and F. Saidi, Nonlinear optical properties of lens-shaped core/shell quantum dots coupled with a wetting layer: effects of transverse electric field, pressure, and temperature. Journal of Physics and Chemistry of Solids, 138 (2020) 109226. https://doi.org/10.1016/j.jpcs.2019.109226

[22] Mo, Q., et al., Room temperature synthesis of stable silica-coated CsPbBr 3 quantum dots for amplified spontaneous emission. Photonics Research, 8(10)  (2020) 1605-1612. https://doi.org/10.1364/PRJ.399845

[23] Zekavat, M.A., M. Sabaeian, and G. Solookinejad, Graphene plasmonic coupling with intersubband radiation of truncated pyramidal-shaped InAs/GaAs quantum dots. JOSA B, 38(6)  (2021) 1824-1833. https://doi.org/10.1364/JOSAB.416163

[24] Choubani, M., et al., Nonlinear optical rectification in vertically coupled InAs/GaAs quantum dots under electromagnetic fields, pressure and temperature effects. Journal of luminescence, 144 (2013) 158-162. https://doi.org/10.1016/j.jlumin.2013.07.002

[25] Sabaeian, M. and M. Shahzadeh, GaAs pyramidal quantum dot coupled to wetting layer in an AlGaAs matrix: A strain-free system. Physica E: Low-Dimensional Systems and Nanostructures, 68  2015). 215-223. https://doi.org/10.1016/j.physe.2015.01.004

[26] Zettili, N., Quantum mechanics: concepts and applications. (2003), American Association of Physics Teachers. https://doi.org/10.1119/1.1522702