The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency

الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی

Sayed Mohammad Sadegh Hashemi Nassab ¹ , Mohsen Imanieh ² , Abbas Kamaly ³

1 - Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.
2 - Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.
3 - Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.

تاريخ الإرسال : 25 الجمعة , شعبان, 1436 تاريخ التأكيد : 18 الثلاثاء , ربيع الأول, 1437 تاريخ الإصدار : 25 الأربعاء , شعبان, 1437

الکلمات المفتاحية: Efficiency, Solar Cells, ion implantation, Thin Film, absorber layer,

ملخص المقالة :

The main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energy that is widely available as a reliable energy source. Research and Development of Photovoltaic Energy in general, will reduce costs and improve efficiency in both areas. CIGS solar cells have higher efficiency in comparison with other cells. Ion implantation and doping technique offers the unique structure of a solar cells. This paper will examine the performance of solar cells with Cu In_1-x Ga_x Se₂ structure. This willbe performed by Silvaco software. Effect of doping phosphorus (p) and Natrium (Na), as well as the value of x and thethickness of the various layers of the solar cell, on the efficiency of the cell, have been studied.

المصادر:

[1]     M. I. Hoffertet, K. Caldeira,  A. K. Jain,  E. F. Haites, L. D. Danny Harvey, S. D. Potter, M. E. Schlesinger, S. H. Schneider, R. G. Watts, T. M. L. Wigley, D. J. Wuebbles, Energy Implications of Future Stabilization of Atmospheric CO2 Content.Nature, 395 (1998) 881-884. Bp Global, Bp Statistical Review of World Energy June 2007.

(http://www.bp.com/statisticalreview(last accessed August 2007).

[2]     C.Huang, Effects of Ga content on Cu(In,Ga)Se₂ solar cells studied by numerical modeling studied bynumbericmodeling, J. Phys. Chem. Solids, 96 (2002) 330-334.

[3]     I. Repins, S. Glynn, J. Duenow, T. J. Coutts, W. K. Metzger and M. A, Contreras, Required Material Properties for High-Efficiency CIGS Modules, National Renewable Energy Laboratory, 2009, 1-14.

[4]     P. Chelvanathan, M. Hossain, N.Amin, Performance analysis of copper-indium-gallium- deselenide(CIGS) solar cell with various buffer layers by SCAPS, Curr. Appl. Phys, 1 (3)(2000) 323-390.

[5]     J. Lu, W. Liu, A. Y. Kovalgin, Y. Sun, J. Schmitz, S. Member. Integration of solar cells on top of CMOS chip, IEEETrans. Electron. 58 (8) (2011)  2620 - 2627

[6]     A.Luque.and, S. Hegedus,Handbook of Photovoltaic Science and Engineering,Wiley, Usa,2003,1^st.

[7]     J. T. Heath,J. D. Cohen ,W.N.Shafarman,D.X.  Liao, andA.A.Rockett, Effect of Ga content on defect states in CuIn_1−x Ga_x Se₂ photovoltaic devices, Appl. Phys. Lett,  80  (2002 )  4540-4542.

[8]     P.D.Paulson, R. Birkmire,andW.N.Shafarman., Optical Charactrization Of Cu ln_1-x Ga_x Se₂AlloyThinFilms by Spectroscopic Ellipsometry,J.Appl.Phys. 94(2003)  879-888.