Scattering mechanism of nonmagnetic phase on nano diluted magnetic semiconductors (DMS)
Subject Areas : Journal of Optoelectronical Nanostructures
1 - Department of Physics, Ayatollah Amoli Branch, Islamic Azad
University, Amol, Iran
Keywords: electrical resistivity, diluted magnetic semiconductor, Kondo effect, scattering event, relation time,
Abstract :
This paper shows the scattering mechanism at diluted magnetic
semiconductors. The doped magnetic atom produces a scattering potential due to be
coupled of itinerant carrier spin of host material with magnetic momentum of the doped
magnetic atom. Formulas of scattering event were rewritten by the plane wave
expansion and then the electron mobility of DMS was calculated. Calculations show
Kondo effect on diluted magnetic semiconductors at nonmagnetic phase. Here has been
supposed that the doping concentration is low and so the coupling coefficient between
magnetic atoms is weak enough that DMS does not change its magnetic phase. In other
words, material is on paramagnetic phase. For proofing our model, we have grown
Zn0.99Mn0.01O with Sol-Gel route. Pure ZnO has also grown with this method for a
comparison. Experimental results proved our theoretical model. Therefore as a result, at
diluted magnetic semiconductors similar to diluted magnetic metals in nonmagnetic
phase can observe kondod's effect .
[1] W. Meissner and B. Voigt, Widerstand der reinen metalle bei tiefen temperaturen.
Ann. Phys. 7, 761(1930) 892.
[2] J. Kondo, Resistance minimum in dilute magnetic alloys. Prog. Theoret. Phys.
32(1964)37
[3] Philip W. Anderson, The Kondo effect. Theoretical Physics: 2nd (2005) pp. 297-324.
[4] H. Brooks, Theory of the electrical properties of germanium and silicon. Adv.Electron.
Electron phys. 7(1955) 158.
[5] C. Erginsoy, Neutral impurity scattering. Phys. Rev. 79(1950)1013.
[6] F. M. S Lima, A. B. Veloso, A. L. Fonseca, O. A. C. Nunes, Limitation of electron
mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures.
Brazilian Journal of Physics, 36(2006).365
[7] J. Bardeen, W. Shockley, Deformation potentials and mobilities in non-polar crystals.
Phys. Rev. 80(1950)72
[8] W. A. Harrison, Scattering of Electrons by lattice vibrations in nonpolar crystals.
Phys. Rev. 104(1956)1281
[9] H. J. G. Meijer, D. polder, Note on polar scattering of conduction electrons in regular
crystalsphysica 19(1953)255.
[10] F. Strigari, M. Sundermann, Y. Muro, K. Yutani, T. Takabatake, K. D. Tsuei, Y.F.
Liao, A. Tanaka, P. Thalmeier, M.W. Haverkort, L.H. Tjeng, A. Severing, Quantitative
study of valence and configuration interaction parameters of the Kondo
semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard X-ray
photoelectron spectroscopy Journal of Electron Spectroscopy and Related Phenomena,
199(2015) 56-63.
[11] H. R. Alaei, M. Yuonesi, pH effect on physical properties of zinc oxide nano
structures grown by sol- gel. JOAM , Vol. 17, No. 5-6, May – June 2015, p. 691 - 698
[12] R. J. Elliot, Theory of the effect of spin-orbit coupling on magnetic resonance in some
semiconductors. Phys. Rev., 96 (1954) 266,
[13] M. I. D'yakonov, V. A. Marushchak, V. I. Perel', and A. N. Titkov, The effect of strain
on the spin relaxation of conduction electrons in Ill-Vsemiconductors. Zh. Eksp. Teor.
Fiz., 60(1954) 1971.
[14] G. L. Sir, A. G. Aronov, and G. E. Pikus. Zh. Spin relaxation of electrons due to
scattering by holes.Eksp. Teor. Fiz., 69(1975)1382,
[15] Y. Yafet, in Solid State Physics, edited by F. Seitz and D. Turnbull, g Factors and
Spin-Lattice Relaxation of Conduction Electrons. Academic, New York, 14 (1963) 1.