Investigation of the Structural and Electrical Properties of Star Shape Manganese Thin Films with 3-fold and 4-fold Symmetries
Subject Areas :
Polymer
Fatemeh Abdi
1
1 - Department of Engineering Sciences, Faculty of Advanced Technologies, University of Mohaghegh Ardabili, Namin, Iran
Received: 2023-12-13
Accepted : 2023-12-13
Published : 2023-10-01
Keywords:
Abstract :
Manganese star shape sculptured thin films with 3-fold and 4-fold symmetries were formed on glass substrates using glancing angle deposition method. The cross section of the structures was observed by field emission scanning electron microscopy. Atomic force microscopy and X-ray diffraction patterns were used to investigate the surface morphology and crystalline degree of the samples. The grain size and surface roughness of the samples were obtained using Nova software. The results showed that the porosity percentage of the star shape thin films depended on the grain size andshape of the structures. The electrical resistance of the star shape sculptured thin films was obtained using a four-point probe technique. Finally, electrical resistance dependence on the porosity percentage was investigated.
References:
Flory F, Escoubas L. Optical properties of nanostructured thin films. Progress in quantum electronics. 2004 Jan 1;28(2):89-112.
Wang F, Lakhtakia A. Response of slanted chiral sculptured thin films to dipolar sources. Optics communications. 2004 May 1;235(1-3):133-51.
Wang F, Lakhtakia A. Response of slanted chiral sculptured thin films to dipolar sources. Optics communications. 2004 May 1;235(1-3):133-51.
Nieuwenhuizen JM, Haanstra H. Microfractography of thin films. Philips Tech Rev. 1966;27(3):87-91.
Messier R, Yehoda JE. Geometry of thin‐film morphology. Journal of applied physics. 1985 Nov 15;58(10):3739-46.
Motohiro T, Taga Y. Thin film retardation plate by oblique deposition. Applied optics. 1989 Jul 1;28(13):2466-82.
Messier R, Lakhtakia A. Sculptured thin films—II. Experiments and applications. Materials Research Innovations. 1999 Jan 1;2(4):217-22.
Hodgkinson I, Wu QH. Inorganic chiral optical materials. Advanced materials. 2001 Jul;13(12‐13):889-97.
Lakhtakia A, Geddes JB. Thin-film metamaterials called sculptured thin films. Trends in Nanophysics: Theory, Experiment and Technology. 2010:59-71.
10 Lakhtakia A, Messier R. Sculptured thin films—I. Concepts. Materials Research Innovations. 1997 Dec 1;1(3):145-8.
Messier R, Venugopal VC, Sunal PD. Origin and evolution of sculptured thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2000 Jul 1;18(4):1538-45.
Suzuki MS, Taga YT. Integrated sculptured thin films. Japanese Journal of Applied Physics. 2001 Apr 1;40(4A):L358.
Angadi MA. Some transport properties of transition metal films. Journal of materials science. 1985 Mar;20:761-96.
Angadi MA, Shivaprasad SM. A new material for the fabrication of thin film resistors. Journal of materials science letters. 1984 Aug;3(8):739-42.
Perinati A, Piacentini GF. Thermoelectric power, Hall coefficient, and structure properties of Ta thin films rf sputtered in Ar–N2–O2. Journal of Vacuum Science and Technology. 1977 Jan;14(1):169-73.
Shivaprasad SM, Angadi MA. The effect of deposition rate on the electrical resistivity of thin manganese films. Journal of Physics D: Applied Physics. 1980 Aug 14;13(8):L157.
Shivaprasad SM, Angadi MA, Udachan LA. Temperature coefficient of resistance of thin manganese films. Thin Solid Films. 1980 Aug 15;71(1):L1-4.
Shivaprasad SM, Angadi MA. The effect of substrate temperature on the electrical resistivity of thin manganese films. Journal of Physics D: Applied Physics. 1981 Jun 14;14(6):1125.
Ammar AH. Electrical transport properties of manganese thin films. Physica B: Condensed Matter. 1996 Jul 1;225(1-2):132-6.
Trivedi N, Ashcroft NW. Quantum size effects in transport properties of metallic films. Physical Review B. 1988 Dec 15;38(17):12298.
Sondheimer EH. The mean free path of electrons in metals. Advances in physics. 2001 Sep 1;50(6):499-537.
Namba Y. Resistivity and temperature coefficient of thin metal films with rough surface. Japanese Journal of Applied Physics. 1970 Nov 1;9(11):1326.
Cottey AA. The electrical conductivity of thin metal films with very smooth surfaces. Thin Solid Films. 1968 Jan 1;1(4):297-307.
Tellier CR, Tosser AJ. Adequate use of the Cottey Model for the description of conduction in polycrystalline films. Active and Passive Electronic Components. 1979 Jan 1;6:37-8.
Liu HD, Zhao YP, Ramanath G, Murarka SP, Wang GC. Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films. Thin Solid Films. 2001 Mar 1;384(1):151-6.
Rossnagel SM, Kuan TS. Alteration of Cu conductivity in the size effect regime. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. 2004 Jan 1;22(1):240-7.
Dayal D, Rudolf P, Wiβmann P. Thickness dependence of the electrical resistivity of epitaxially grown silver films. Thin Solid Films. 1981 May 15;79(2):193-9.
Camacho JM, Oliva AI. Morphology and electrical resistivity of metallic nanostructures. Microelectronics Journal. 2005 Mar 1;36(3-6):555-8.
Mayadas AF, Shatzkes M. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces. Physical review B. 1970 Feb 15;1(4):1382.
Sambles JR. The resistivity of thin metal films—some critical remarks. Thin Solid Films. 1983 Aug 26;106(4):321-31.
Durkan C, Welland ME. Size effects in the electrical resistivity of polycrystalline nanowires. Physical review B. 2000 May 15;61(20):14215.
Feder J, Rudolf P, Wissmann P. The resistivity of single-crystal copper films. Thin Solid Films. 1976 Jul 15;36(1):183-6.
Yarimbiyik AE, Schafft HA, Allen RA, Zaghloul ME, Blackburn DL. Modeling and simulation of resistivity of nanometer scale copper. Microelectronics Reliability. 2006 Jul 1;46(7):1050-7.
Fan P, Yi K, Shao JD, Fan ZX. Electrical transport in metallic films. Journal of applied physics. 2004 Mar 1;95(5):2527-31.
Lacy F.Developing a theoretical relationship between electrical resistivity, temperature and film thickness for conductors. Nanoscale research letters. 2011 Dec;6:1-4.
Brousseau JL, Bourque H, Tessier A, Leblanc RM. Electrical properties and topography of SnO2 thin films prepared by reactive sputtering. Applied surface science. 1997 Mar 1;108(3):351-8.
Sakashita Y, Segawa H, Tominaga K, Okada M. Dependence of electrical properties on film thickness in Pb (Zr x Ti1− x) O3 thin films produced by metalorganic chemical vapor deposition. Journal of applied physics. 1993 Jun 1;73(11):7857-63.
Das VD, Ganesan PG. Thickness and temperature dependence of electrical properties of semiconducting (Bi0. 75Sb0. 25) 2Te3 thin films. Solid state communications. 1998 May 1;106(5):315-20.
Romanov RI, Kozodaev MG, Chernikova AG, Zabrosaev IV, Chouprik AA, Zarubin SS, Novikov SM, Volkov VS, Markeev AM. Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors. ACS omega. 2021 Dec 9;6(50):34429-37.
He J, Li F, Chen X, Qian S, Geng W, Bi K, Mu J, Hou X, Chou X. Thickness dependence of ferroelectric and optical properties in Pb (Zr0. 53Ti0. 47) O3 thin films. Sensors. 2019 Sep 20;19(19):4073.
Yao JK, Ye F, Fan P. Temperature-dependent optical and electrical properties of InGaZnON thin films. Optical Materials Express. 2019 Sep 1;9(9):3781-8.
Domtau DL, Simiyu J, Ayieta EO, Muthoka B, Mwabora JM. Optical and electrical properties dependence on thickness of screen-printed TiO2 thin films. Journal of Materials Physics and Chemistry. 2016; 4(1),:1-3.