Effect of Absorption Coefficients in Upper Efficiency Limit of Intermediate Band Solar Cells
محورهای موضوعی : Majlesi Journal of Telecommunication Devices
1 - Islamic Azad University, Isfahan Branch/Faculty of Skills and Entrepreneurship, Isfahan, Iran
کلید واژه: Band Position, Detailed Balance Theory, Output Power Reduction, IBSC,
چکیده مقاله :
In this paper, the idea of an intermediate band solar cell which increases the efficiency of solar cells is considered. By using quantum dots the idea of intermediate band solar cell can be achieved at an acceptable level. Actual results of using quantum dots have led to decreased efficiency of solar cells. The effect of absorption coefficients on the upper limit of efficiency in special types of solar cells is the focus of this paper. The main factors that have the most impact on the upper limit of efficiency of our position of intermediate bands and consequently the structure of quantum dots are analyzed. Furthermore, the changes in cell characteristics, quantum dot type, quantum dot structure, and even polarization of the incident light can change the upper limit of efficiency. Changes in distance layers of quantum dots create different results for different polarization of light for the upper limit of efficiency. Using the results of this research can be a way to new research in the field of solar cells with quantum dots and the optimum use of solar cells will be useful..
In this paper, the idea of an intermediate band solar cell which increases the efficiency of solar cells is considered. By using quantum dots the idea of intermediate band solar cell can be achieved at an acceptable level. Actual results of using quantum dots have led to decreased efficiency of solar cells. The effect of absorption coefficients on the upper limit of efficiency in special types of solar cells is the focus of this paper. The main factors that have the most impact on the upper limit of efficiency of our position of intermediate bands and consequently the structure of quantum dots are analyzed. Furthermore, the changes in cell characteristics, quantum dot type, quantum dot structure, and even polarization of the incident light can change the upper limit of efficiency. Changes in distance layers of quantum dots create different results for different polarization of light for the upper limit of efficiency. Using the results of this research can be a way to new research in the field of solar cells with quantum dots and the optimum use of solar cells will be useful..
[1] Shockley W. & Queisser H. J. “Detailed balance limit of efficiency of p-n junction solar cells”. J. Appl. Phys. 32, 510-519 (1961).
[2] Luque A. & Marti A. “Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels”. Phys. Rev. Lett. 78, 5014-5017 (1997).
[3] J. Bruns, W. Seifert, P. Wawer, H. Winnicke, D. Braunig, and H. Wagemann, “Improved efficiency of crystalline silicon solar cells due to he+ implantation”. Applied Physics Letters, vol. 64, no. 20, pp. 2700–2, 1994.
[4] M. J. Keevers and M. A. Green, Sol. Energy Mater. Sol. Cells 41 195 (1996).
[5] H. Kasai, T. Sato, and H. Matsumura, “Impurity photovoltaic effect in crystalline silicon solar cells”, in Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 (Cat. No.97CB36026), 1997, pp. 215–18.
[6] S. P. Bremner, R. Corkish, and C. B. Honsberg, “Detailed balance efficiency limits with quasi-fermi level variations”, IEEE Transactions on Electron Devices, vol. 46, no. 10, pp. 1932–9, 1999.
[7] L M. Green, “Prospects for photovoltaic efficiency enhancement using low-dimensional structures”. Nanotechnology, vol. 11, no. 4, pp. 401–5, 2000.
[8] K. Barnham, B. Braun, J. Nelson, M. Paxman, C. Button, J. Roberts, and C. Foxon, “Short-circuit current and energy efficiency enhancement in a low-dimensional structure photovoltaic device”, Applied Physics Letters, vol. 59, no. 1, pp. 135–7, 1991.
[9] A. Mart´ı, L. Cuadra, and A. Luque, “Quantum dot intermediate band solar cell”, in Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference, Anchorage, AK, USA, 2000, pp. 940–3.
[10] A. Mart´ı, E. Antol´ın, C. Stanley, C.Farmer, N. L´opez, P. D´ıaz, E. C´anovas, P. Linares, and A. Luque, “Production of photocurrent due to intermediate-to-conduction-band transitions: A demonstration of a key operating principle of the intermediate-band solar cell”, Physical Review Letters, vol. 97, no. 24, pp. 247 701/1–4, 2006.
[11] A. G. Norman, M. C. Hanna, P. Dippo, D. H. Levi, R. C. Reedy, J. S.Ward, and M.M. Al-Jassim, “InGaAs/GaAs QD superlattices: MOVPE growth, structural and optical characterization, and application in intermediate-band solar cells”, in Conference Record of the 31st IEEE Photovoltaic Specialists Conference, Orlando, FL, USA, 2005, pp. 43–8.
[12] M. Y. Levy and C. Honsberg, “Nanostructured absorbers for multiple transition solar cells”, IEEE Transactions on Electron Devices, vol. -, no. -, p. in print, 2008.
[13] K. Yu, W. Walukiewicz, J.W. Ager III, D. Bour, R. Farshchi, O. Dubon, S. Li, I. Sharp, and E. Haller, “Multiband GaNAsP quaternary alloys”, Applied Physics Letters, vol. 88, no. 9, p. 092110, 2006.
[14] W. Shan, W. Walukiewicz, J.W. Ager III, E. Haller, J. Geisz, D. Friedman, J. Olson, and S. Kurtz, “Band anticrossing in gainnas alloys”, Physical Review Letters, vol. 82, no. 6, pp. 1221 – 4, 1999.
[15] W. Walukiewicz, K. Yu, J. Wu, J.W. Ager III, W. Shan, M. Scrapulla, O. Dubon, and P. Becla, “Highly mismatched alloys for intermediate band solar cells”, Thin-Film Compound Semiconductor Photovoltaics. Symposium (Materials Research Society Symposium Proceedings Vol.865), pp. 125–30, 2005.
[16] Luque, A., and Steven Hegedus. “Handbook of Photovoltaic Science and Engineering”. Chichester, West Sussex, U.K.: Wiley, 2011. Print.
[17] Martí A, Cuadra L, Luque A. ”Quantum dot intermediate band solar cell”. IEEE: Proc. 28th IEEE Photovoltaics Specialists Conference, New York, 2000.
[18] Luque A, Martí A, Stanley C, López N, Cuadra L, Zhou D, Mc-Kee A. “General equivalent circuit for intermediate band devices: potentials, currents and electroluminescence”. Journal of Applied Physics 2004; 96(1): 903–909.
[19] Berryman KW, Lyon SA, Segev M. “Mid-infrared photoconductivity in InAs quantum dots”. Applied Physics Letters 1997; 70(14): 1861–1863.
[20] Liu HC, Duboz JY, Dudek R, Wasilewski ZR, Fafard S, Finnie P. “Quantum dot infrared photodetectors”. Physica E: Low-dimensional Systems and Nanostructures 2003; 17: 631–633.
[21] Luque A, Marti A, Antolin E, Garcia-Linares P. “Intraband absorption for normal illumination in quantum dot intermediate band solar cells”. Solar Energy Materials and Solar Cells 2010; 94: 2032–2035.
[22] Luque A, Marti A, Mellor A, Fuertes Marron D, Tobias I & Antolin E. “Absorption coefficient for the intraband transitions in quantum dot materials”. Prog. Photovolt: Res. Appl. (2012);
[23] Luque A, Martí A, Antolín E, Linares PG, Tobías I, Ramiro I, Hernandez E. “New Hamiltonian for a better understanding of the quantum dot intermediate band solar cells”. Solar Energy Materials and Solar Cells 2011; 95(8): 2095–2101.
[24] Nozawa T. & Arakawa Y. “Detailed balance limit of the efficiency of multilevel intermediate band solar cells”. Appl. Phys. Lett. 98, 171108 (2011).
