A New Analysis, Design and Fabrication of DVB-T/T2 LDMOS UHF Broadband Amplifier
محورهای موضوعی : Majlesi Journal of Telecommunication Devices
Farbod Setoudeh
1
(Department of Electrical Engineering, Arak University of Technology, Arak, Iran.)
Mohsen Pooya
2
()
کلید واژه: Power Amplifier, Digital Video Broadcasting-Terrestrial, Multi Frequency Network, microstrips,
چکیده مقاله :
In this paper we want to design linear amplifiers for the Multi Frequency Network (MFN) or Single Frequency Network (SFN) digital terrestrial applications for Digital Video Broadcasting-Terrestrial (DVB-T/T2) transmitters with frequencies of 400 to 900 MHz, so to achieve this aim, we have used Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor technology has been used. The RF input signal reaches the divider ballun, and then the input of both LDMOS transistors is given and the output of two transistors by the collector balloon reaches the output of the amplifier. We have simulated this design by using the Agilent Design System (ADS) software simulator with a gain more than 24 dB, the (Inter Modulation Distortion (IMD) signal has been attenuated from -29 to -52.5dBc and Power Added Effeciency (PAE) from 48 to 66% with 4-stage matching network consisting of capacitors and microstrips with a drain bias voltage of 28 volts and gate bias voltage of 2.86 volts in the frequency range 400 to 900 MHz. Eventually all of the circuit is designed on a printed circuit board.
[1] S. Alsahali, D. Gecan, A. Alt, G. Wang, S. M. H. Syed Anera, P. Chen, S. Woodington, A. Sheikh, P. Tasker, and J. Lees, “A novel modulated rapid load pull system with digital pre-distortion capabilities,” in 93rd ARFTG Microwave Measurement Conference (ARFTG), Boston, USA, July 7, 2019.
[2] S. M. H. Syed Anera, “High-Efficiency And Broadband Pa Design Considering The Impact Of Device Knee Voltage” A thesis submitted to Cardiff University in candidature for the degree of Doctor of Philosophy, 2019.
[3] S. J. C. H. Theeuwen, H. Mollee, R. Heeres and F. Van Rijs, “LDMOS technology for power amplifiers up to 12 GHz,” in 13th European Microwave Integrated Circuits Conference (EUMiC), Madrid, September 2018.
[4] T. S. Kaldi Li, Song Di, and William Yin, “A 40W ultra broadband LDMOS power amplifier,” presented at the Int. IEEE Conf. Microwave Symposium, 2015.
[5] L. S. Dajie Dai, Jincai Wen,Guodong Su, and Lili Guo, “A 10W broadband power amplifier for base station,” presented at the Int. IEEE Conf. On Microwave and Millimeter Wave Technology , 2012.
[6] L. W. Srinidhi Embar R., Jangheon Kim, Chris Dragon, and Geoffrey Tucker, “A 400 W 2-way asymmetrical doherty PA with 50% efficiency based on second-generation airfastTM LDMOS technology,” presented at Int. IEEE conf. The Power Amplifiers for Wireless and Radio Applications , 2015.
[7] J. H. Qureshi, W. Sneijers,R. Keenan, L. C. N. deVreede, and F. van Rijs, “A 700-W Peak Ultra-Wideband Broadcast Doherty Amplifier,” presented at Int. IEEE Conf. Microwave Symposium , 2014.
[8] M. Hayatia,and S. Roshani, “A Broadband Doherty Power Amplifier with HarmonicSuppression,” AEUE Int. Journal of Electronics and Communications,. 2013.
[9] J. Yao, G. Shen ,G. Zhang, and J. Chen,” A Novel Four Stage 200W Doherty Power Amplifier for DVB-T Transmitter,” presented at Int. IEEE Conf On Microwave and Millimeter Wave Technology, 2012.
[10] N. D. L´opez , J. Hoversten, Z. Popovi´c, and Fellow ,”Design Method for UHF Class-E Power Amplifiers,” presented at Int. Annual IEEE Conf. Compound Semiconductor Integrated Circuit Symposium, 2009.
[11] L. Piazzon, R. Giofrµe, P. Colantonio, and F. Giannini, “A Method for Designing Broadband Doherty Power Amplifers,” Progress In Electromagnetics Research, Vol. 145, pp. 319-331, 2014.
[12] Y. Shang, H. Xu, J. Mo, Z. Wang, X. Xu, Z. Tu, X. Zhang, H. Zheng, W. Chen, and F. Yu, “The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching,” Active and Passive Electronic Components, Hindawi Publishing Corporation, VoL.2016, Article ID 6295405, 7 pages,2016.
[13] X. Chen, W. Chen, F. M. Ghannouchi, Z. Feng, and Y. Liu, “A Broadband Doherty Power Amplifier Based on Continuous-Mode Technology,” IEEE Transactions on Microwave Theory and Techniques, VOL. 64, Issue. 12, pp. 4505 – 4517, Dec. 2016 .
[14] Y. Dong, L. Mao and S. Xie, “Fully Integrated Class-J Power Amplifier in Standard CMOS Technology,” IEEE Microwave and Wireless Components Letters ,Vol.27, Issue. 1, Jan. 2017.
[15] W. Hallberg, M. Özen, D. Gustafsson,K. Buisman, and C. Fager, “A Doherty Power Amplifier Design Method for Improved Efficiency and Linearity,” IEEE Transactions on Microwave Theory and Techniques, Vol.64, Issue.12, Dec. 2016.
[16] J. Hur, H. Kim, O. Lee, K. W. Kim, K. Lim, C. Lee and J. Laskar, “A Multi-Level Class D CMOS Power Amplifier for an Out-Phasing Transmitter with a Non-Isolated Power Combiner,” IEEE Transactions on Circuits and Systems II: Express Briefs, Vol.63, Issue. 7, July 2016 .
[17] K. Kim, J. Ko, S. Lee, and S. Nam, “A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications,” IEEE Transactions on Circuits and Systems II: Express Briefs ,Vol.63, Issue. 6, June 2016 .
[18] H. Lee, and et al., “Optimized Current of the Peaking Amplifier for Two-Stage Doherty Power Amplifier,” IEEE Transactions on Microwave Theory and Techniques, Vol. 65, Issue.1, Jan. 2017.
[19] M. Özen,K. Andersson, and C.Fager, “Symmetrical Doherty Power Amplifier With Extended Efficiency Range,” IEEE Transactions on Microwave Theory and Techniques, Vol. 64, Issue. 4, April 2016.
[20] J. Pang and et al., “Design of continuous-mode GaN power amplifier with compact fundamental impedance solutions on package plane,” IET Microwaves, Antennas & Propagation, Vol. 10, Issue. 10, 7 18 2016.
[21] T. Qi, S. He and W. Shi , “Third-octave power amplifier using ring based matching network with high efficiency.” ELECTRONICS LETTERS ,Vol. 52 , No. 10 pp. 883–885, 12th May 2016.
[22] H. Taghavi and et.al., “Sequential Load-pull Technique for Multi-octave Design of RF Power Amplifiers,” IEEE Transactions on Circuits and Systems II, Express Briefs Vol. 63, Issue.9, Sept. 2016.
[23] H.F. Wu and et al. , “Analysis and Design of an Ultrabroadband Stacked Power Amplifier in CMOS Technology,” IEEE Transactions on Circuits and Systems II, Express Briefs Vol. 63, Issue. 1, Jan. 2016.
[24] D. Fan, Y. Deng, and Z n.. Li,”Design and Simulation of a Wideband PowerAmplifier from 600MHz to 1000MHz,”presented at the 3rd Int. IEEE Conf. Symposium on Microwave Antenna Propagation and EMC Technologies for Wireless Communications, 2009.
[25] H. J. Zhou,and H. F. Wu,” Design Of An S-Band Two-Way Inverted Asym-Metrical Doherty Power,” Progress In Electromagnetics Research Letters,Vol. 39 ,2013.
[26] C. Sun, T. Liu, Y. Ye, Y. Zhao, X. Luo,and J. Li,” Optimization Design of A Broadband Three-Stage Doherty Power Amplifier,” presented at Int. IEEE Conf. On Electronics, Communications and Control ,2011.
[27] A. C. N. Giovanneu, P. Singerl, S. Maddiol, C. Schuberth, and G. M. A. Del Chiaro, “A 250W LDMOS Doherty PA with 31% of Fractional Bandwidth for DVB-T Applications,” presented at Int. IEEE Conf. Microwave Symposium, 2014 .
[28] D. H. Chuc,and B. G. Duong, “Design and fabrication of a high power S band LDMOS amplifier for microwave powertransmission and wireless communication,” Int. Journal of Advancements in Communication Technologies , vol. 1 , 2014.
[29] K. Narendra and et al. “Dual Fed Distributed Amplifier With Controlled Termination Adjustment,” Progress In Electromagnetics Research, Vol. 139, pp.761-777, 2013.
[30] U. Eswaran and et al. “A High Efficiency 1.8W Power Amplifier for Wireless Communications, ” ELEKTRONIKA IR ELEKTROTECHNIKA, Vol. 20, 2014.
[31] U. Eswaran and et al. “Class-E Power Amplifier with Novel Pre-Distortion Linearization Technique for 4G Mobile Wireless Communications, ” ELEKTRONIKA IR ELEKTROTECHNIKA ,Vol. 20, 2014.
[32] R. Ludwig, and P. Bretchko, RF CIRCUIT DESIGN:THEORY AND APPLICATIONS. Prentic Hall:Tom Robbins,2000.
[33] M. Sajedin, I.T.E. Elfergani, J. Rodriguez, R. Abd-Alhameed, and M. Fernandez Barciela, “A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications” Electronics, Vol. 8, pp. 1-31, 2019.
[34] B. Shah, G. Dalwadi, H. Shah, and N. Kothari, “Novel Outphasing Power Amplifiers Designed Withan Analytic Generalized Doherty–ChireixContinuum Theory” IETE Journal of Research, Vol. 10, pp. 1-10, 2019.
[35] S. Zhao, L.Yang, Y. REN, and Y. Xu, “Linearity Improved Doherty Power Amplifier Using Non-Foster Circuit” IEEE Access, Vol.7, pp. 40109-40113, 2019.
[36] C. Liang, P. Roblin, Y. Hahn, Z. Popovic, and H. C. Chang, “Novel Outphasing Power Amplifiers Designed With an Analytic Generalized Doherty–Chireix Continuum Theory” IEEE Transactions On Circuits And Systems–I, pp. 1-14, 2019.
[37] V. Prodanov, and M. Banu, “Power Amplifier Principles and Modern Design Techniques,” in Wireless
