Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique
محورهای موضوعی : Journal of Theoretical and Applied PhysicsM. S. Bashar 1 , Rummana Matin 2 , Munira Sultana 3 , Ayesha Siddika 4 , M. Rahaman 5 , M. A. Gafur 6 , F. Ahmed 7
1 - Institute of Fuel Research and Development, Bangladesh Council of Scientific and Industrial Research
2 - Institute of Fuel Research and Development, Bangladesh Council of Scientific and Industrial Research
3 - Institute of Fuel Research and Development, Bangladesh Council of Scientific and Industrial Research
4 - Institute of Fuel Research and Development, Bangladesh Council of Scientific and Industrial Research
5 - Institute of Fuel Research and Development, Bangladesh Council of Scientific and Industrial Research
6 - Institute of Fuel Research and Development, Bangladesh Council of Scientific and Industrial Research
7 - Department of Physics, Jahangirnagar University
کلید واژه: Zinc sulfide, Rapid thermal annealing, RF Sputtering, XRD, UV–Vis spectroscopy,
چکیده مقاله :
AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.
