Abnormal electronic transport in disordered four-terminal graphene nanodevice
محورهای موضوعی : Journal of Theoretical and Applied Physics
Amirhossein Ahmadkhan Kordbacheh
1
(
Department of Physics, Iran University of Science and Technology
)
Azadeh Jafari
2
(
Plasma Physics Research Center, Science and Research Branch, Islamic Azad University
)
Mehdi Afshar Arjmand
3
(
Department of Physics, Iran University of Science and Technology
)
کلید واژه: Quantum transport, Graphene nanodevice, Transmission coefficient,
چکیده مقاله :
AbstractIn this paper, a numerical study of quantum transport in a disordered four-terminal graphene nanodevice is investigated based on the Landauer approach. The effects of impurity on transmission coefficient of the electron injected into the system are studied using tight-binding model. In this manner, we emphasize that when the disorder density is sufficiently large, the transmission coefficients and the current reduce due to multiscattering phenomenon. We have found that the perfectly conducting channel develops in four-terminal device in its zigzag edge if the range of impurity gets exponentially wider. The theoretical results obtained can be a base for the development in designing graphene nanodevice.
