Optimization of MoO3/Ag/MoO3 Multilayer Transparent Conductive Electrodes via Thermal Annealing for Optoelectronics Application
محورهای موضوعی : Journal of Environmental Friendly Materials
Z Nouri
1
,
F Hajakbari
2
,
A Hojabri
3
1 - Department of Physics, Ka. C, Islamic Azad University, Karaj, Iran.
2 - Department of Physics, Ka.C, Islamic Azad University, Karaj, Iran
3 - Department of Physics, Ka. C, Islamic Azad University, Karaj, Iran.
کلید واژه: Transparent Electrodes, Trilayer, RF Sputtering, Thermal Annealing, MoO3, Ag,
چکیده مقاله :
Transparent conductive electrodes (TCEs) are an indispensable component in optoelectronic devices and organic solar cells (OSCs). Recently, oxide/metal/oxide multilayers have been identified as promising structures (TCEs). In this context, we prepared MoO3/Ag/MoO3 (MAM) multilayer structures on glass substrates at different Ag thicknesses using RF and DC magnetron sputtering. Samples were prepared with Ag thicknesses ranging from 5 to 10 nm. As a result of varying the Ag midlayer thickness, the MA (10nm) M trilayer structure with more desirable electrical, optical, and morphological properties compared to other samples was selected and was exposed to thermal annealing with an oxygen to argon flow ratio of 20% at temperatures of 400 and 500 °C for 2 h in an electric furnace. Investigations highlighted the prominent role of reactive thermal annealing in optimizing the properties of multilayer structures, which has led to improved stoichiometry of the MoO3 layer and increased optical transmittance and electrical conductivity of trilayer structures. The MA(10 nm, 400 °C) M multilayers with a modified figure of merit of 23.86×10-3 (Ω-1) as the optimal structure have potential application as TCEs in optoelectronic devices and (OSCs)
Transparent conductive electrodes (TCEs) are an indispensable component in optoelectronic devices and organic solar cells (OSCs). Recently, oxide/metal/oxide multilayers have been identified as promising structures (TCEs). In this context, we prepared MoO3/Ag/MoO3 (MAM) multilayer structures on glass substrates at different Ag thicknesses using RF and DC magnetron sputtering. Samples were prepared with Ag thicknesses ranging from 5 to 10 nm. As a result of varying the Ag midlayer thickness, the MA (10nm) M trilayer structure with more desirable electrical, optical, and morphological properties compared to other samples was selected and was exposed to thermal annealing with an oxygen to argon flow ratio of 20% at temperatures of 400 and 500 °C for 2 h in an electric furnace. Investigations highlighted the prominent role of reactive thermal annealing in optimizing the properties of multilayer structures, which has led to improved stoichiometry of the MoO3 layer and increased optical transmittance and electrical conductivity of trilayer structures. The MA(10 nm, 400 °C) M multilayers with a modified figure of merit of 23.86×10-3 (Ω-1) as the optimal structure have potential application as TCEs in optoelectronic devices and (OSCs)
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