The influence of substrate preparation conditions on the Raman spectra of In2S3 thin films prepared by physical vapor deposition

محورهای موضوعی : فصلنامه نانوساختارهای اپتوالکترونیکی

Bashir Eghbalifar ¹ , Heydar Izadneshan ² , Ghahraman Solookinejad ³ , Leila Separdar ⁴

1 - Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
2 - Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
3 - Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
4 - Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran

تاریخ دریافت : 1400/11/08 تاریخ پذیرش : 1401/02/10 تاریخ انتشار : 1401/03/11

کلید واژه: structure, In2S3, buffer layer, Raman spectroscopy, Thin films,

چکیده مقاله :

In this paper, we employed Raman spectroscopy to
investigate Indium sulfide thin layer films deposited on
glass substrates using the PVD method. The results showed
that the bandwidth and Raman shift of different In2S3 thin
films depended on the annealing temperature. In addition,
the crystallization stage from tetragonal to cubic occurred
at the excessive temperature range of 350-400 °C. The
Raman spectroscopy of the In2S3 thin films before
annealing and at 300 °C indicated the existence of β- In2S3
at 70, 166 and 281 cm-1 in the active modes of the spectra.
New modes that were related to α-In2S3 appeared at 126,
244, and 266 cm-1 after thermal treatment at 400 °C for 30
and 60 min. Our results are in agreement with the phase
transitions observed from the XRD analysis of In2S3 thin
films. There are few reports about the Raman spectroscopy
of In2S3 thin layer films deposited using vacuum thermal
evaporation. In the present paper, the Raman spectra of
In2S3 thin films with different thicknesses as well as the
effects of temperature on their depositions in vacuum were
examined.

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