Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations

محورهای موضوعی : فصلنامه نانوساختارهای اپتوالکترونیکی

Payman Bahrami ¹ , Mohammad Reza Shayesteh ² , Majid Pourahmadi ³ , Hadi Safdarkhani ⁴

1 - Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
2 - Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
3 - Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
4 - Department of Electrical Engineering, Yazd University, Yazd, Iran

تاریخ دریافت : 1397/05/17 تاریخ پذیرش : 1399/02/03 تاریخ انتشار : 1398/11/12

کلید واژه: Threshold Voltage, FinFET, Manufacturing Process, Drive Current, DIBL Effect,

چکیده مقاله :

Abstract: We present the optimization of the manufacturing process of the 5nm bulk-
FinFET technology by using the 3D process and device simulations. In this paper, by
simulating the manufacturing processes, we focus on optimizing the manufacturing
process to improve the drive current of the 5nm FinFET. The improvement of drive
current is one of the most important issues in the FinFETs design. We first investigate
the impact of manufacturing process parameters include gate oxide thickness, type of
the gate oxide, height of fin, and doping of the source and drain region on threshold
voltage, breakdown voltage, and drive current of the transistor. Then, by selecting the
optimal parameters of the manufacturing process, we improve the drive current of the
5nm bulk-FinFET.

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