Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)
محورهای موضوعی : فصلنامه نانوساختارهای اپتوالکترونیکی
Kazem Pourchitsaz
1
(Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd,
Iran)
Mohammad Reza Shayesteh
2
(Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd,
Iran)
کلید واژه: Field Effect Transistor (FET), Single-Walled Carbon Nanotube (SWCNT), Self-Heating Effect, Transistor Characteristic, Threshold Voltage,
چکیده مقاله :
We present the design and simulation of a single-walled carbon nanotube
(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, the
self-heating effect modeling of the CNT MOSFET structure is performed and compared
with conventional MOSFET structure having same channel length. The numerical
results are presented to show the self-heating effect on the I–V characteristics of the
CNT MOSFET and conventional MOSFET structures. Results from numerical
simulation show that the maximum temperature rise and the performance degradation of
the CNT MOSFET are quite lower than that of the conventional MOSFET counterpart.
These advantages are contributed by the good electrical and thermal properties of the
SWCNTs. Therefore, SWCNT materials have a high capability for the development of
active devices with low power dissipation and good reliability at high operating
temperature.
[1] M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. M. Tsuno, T. Mihara, K. Shibahara, and S. Miyazaki, Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current. IEEE Transactions on Electronic Devices 48 (2) (2009, Feb) 259- 264. [2] A. Rezaei, B. Azizollah-Ganji, and M. Gholipour, Effects of the channel length on the nanoscale field effect diode performance. Journal of Optoelectronical Nanostructures 3 (2) (2018, Jun) 29-40. Available: http://jopn.miau.ac.ir/article_2862.html
[3] J. Appenzeller, Carbon nanotubes for high-performance electronics: Progress and prospect. Proceedings of the IEEE 96 (2) (2008, Feb) 201–211.
[4] A. Svizhenko, M. P. Anantram, and T. R. Govindan, Ballistic transport and electrostatics in metallic carbon nanotube. IEEE Transactions on Nanotechnology 4 (5) (2005, Sep) 557–562.
[5] S. K. Sahoo, G. Akhilesh, R. Sahoo, and M. Muglikar, High-Performance Ternary Adder Using CNTFET. IEEE Transactions on Nanotechnology 16 (3) (2017, May) 368-374. [6] S. Iijima, Helical microtubules of graphitic carbon. nature 354 (6348) (1991, Nov) 56.
[7] E. Pop, Energy dissipation and transport in nanoscale devices. Nano Resaerch 3 (3) (2010, Mar) 147–169. [8] M. Akbari Eshkalak, and R. Faez. A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor. Journal of Optoelectronical Nanostructures 2 (3) (2017, Aug) 1-12. Available: http://jopn.miau.ac.ir/article_2427.html
[9] G. F. Close, S. Yasuda, B. Paul, S. Fujita, and H. S. P. Wong, A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors. Nano Letters 8 (2) (2008, Feb) 706–709. [10] S. J. Wind, J. Appenzeller, R. Martel, V.P.P.A. Derycke, and P. Avouris, Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Applied Physics Letters 80 (20) (2002, May ) 3817-3819. [11] M. Nayeri, P. Keshavarzian, M. Nayeri, A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube. Journal of Optoelectronical Nanostructures 3 (1) (2018, Jan) 15-26.
Available: http://jopn.miau.ac.ir/article_2820.html [12] J. Guo, S. Datta, and M. Lundstrom, A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors. IEEE transactions on electron devices 51(2) (2004, Feb) 172-177. [13] M. Hayati, A. Rezaei, and M. Seifi, CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits. Solid-State Electronics 54 (1) (2010, Jan) 52-57. [14] Y. J. Liu and X. L. Chen, Evaluations of the effective material properties of carbon nanotube-based composites using a nanoscale representative volume element. Mechanics of materials 35 (1-2) (2003, Jan) 69-81. [15] W. C. Chen, W. Y. Yin, L. Jia, and Q. H. Liu, Electrothermal characterization of single-walled carbon nanotube (SWCNT) interconnect arrays. IEEE Transactions on Nanotechnology 8(6) (2009, Nov) 718–728.
[16] J. Guo and M. Lundstrom, Role of phonon scattering in carbon nanotube field-effect transistors. Applied Physics Letters 86 (19) (2005, May) 193103.
[17] Y. Ouyang and J. Guo, Heat dissipation in carbon nanotube transistors. Applied Physics Letters 89 (18) (2006, Oct) 183122. [18] W. Shockley, and W. T. Read Jr, Statistics of the recombinations of holes and electrons. Physical review 87 (5) (1952, Sep) 835. [19] R. N. Hall, Electron-hole recombination in germanium. Physical review 87 (2) (1952, Jul) 387. [20] J. W. Mintmire and C. T. White, Universal density of states for carbon nanotubes. Physical Review Letters 81 (12) (1998, Sep) 2506. [21] C. J. Xing, W. Y. Yin, L. T Liu, and J. Huang, Investigation on self-heating effect in carbon nanotube field-effect transistors. IEEE Transactions on Electron Devices 58 (2) (2011, Feb) 523-529.
[22] S. Hasan, M. A. Alam, and M. S. Lundstrom, Simulation of carbon nanotube FETs including hot-phonon and self-heating effects. IEEE Transactions on Electron Devices 54 (9) (2007, Sep) 2352–2361.
