The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency

محورهای موضوعی : فصلنامه نانوساختارهای اپتوالکترونیکی

Sayed Mohammad Sadegh Hashemi Nassab ¹ (Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.)
Mohsen Imanieh ² (Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.)
Abbas Kamaly ³ (Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.)

تاریخ دریافت : 1394/03/22 تاریخ پذیرش : 1394/10/08 تاریخ انتشار : 1395/03/12

کلید واژه: Efficiency, Solar Cells, ion implantation, Thin Film, absorber layer,

چکیده مقاله :

The main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energy that is widely available as a reliable energy source. Research and Development of Photovoltaic Energy in general, will reduce costs and improve efficiency in both areas. CIGS solar cells have higher efficiency in comparison with other cells. Ion implantation and doping technique offers the unique structure of a solar cells. This paper will examine the performance of solar cells with Cu In_1-x Ga_x Se₂ structure. This willbe performed by Silvaco software. Effect of doping phosphorus (p) and Natrium (Na), as well as the value of x and thethickness of the various layers of the solar cell, on the efficiency of the cell, have been studied.

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