Analysis and Simulation of The Schottky Junction Using an Ensemble Monte Carlo Model
محورهای موضوعی : فصلنامه نانوساختارهای اپتوالکترونیکیFatemeh Haddadan 1 , Mohammad Soroosh 2 , Ramakrishnan Rajasekar 3
1 - Department of Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran
2 - Department of Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz,
Iran
3 - Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Tiruchirappalli, India
کلید واژه: Electron Scattering, Monte Carlo Model, Schottky Junction, Thermionic Emission, Tunneling,
چکیده مقاله :
In this article, an ensemble Monte Carlo model is presented for the Al/n-GaAs Schottky junction using a two-valley regime. The non-parabolic energy bands and electron valleys are considered as Γ and L. Electron scattering mechanisms arising from impurities, optical phonons, and acoustic phonons are assumed, and mechanisms like thermionic emission and tunneling are considered for electron transit through the Schottky barrier. To evaluate the accuracy of the proposed model, the obtained results are compared with data from others. Furthermore, in addition to the potential and electric field distribution in the Schottky junction, the spatial distribution of electrons, energy distribution, velocity distribution, and contributions of various scattering mechanisms are also provided. This microscopic image is one of the prominent features of the proposed model that other numerical models like drift-diffusion and hydrodynamics are not capable of providing. The presented Monte Carlo model can be extended to analysis of different semiconductor devices.
In this article, an ensemble Monte Carlo model is presented for the Al/n-GaAs Schottky junction using a two-valley regime. The non-parabolic energy bands and electron valleys are considered as Γ and L. Electron scattering mechanisms arising from impurities, optical phonons, and acoustic phonons are assumed, and mechanisms like thermionic emission and tunneling are considered for electron transit through the Schottky barrier. To evaluate the accuracy of the proposed model, the obtained results are compared with data from others. Furthermore, in addition to the potential and electric field distribution in the Schottky junction, the spatial distribution of electrons, energy distribution, velocity distribution, and contributions of various scattering mechanisms are also provided. This microscopic image is one of the prominent features of the proposed model that other numerical models like drift-diffusion and hydrodynamics are not capable of providing. The presented Monte Carlo model can be extended to analysis of different semiconductor devices.
