The Electrical Conductivity of charge carriers in Gallium Arsenide semiconductor doped with Cr and Co used in solar cell and optical fiber detectors

Subject Areas : Renewable energy

hassan khaleghi ¹ (دانشگاه آزاد اسلامی واحد سمنان)

Received: 2016-12-04 Accepted : 2016-12-07 Published : 2014-11-22

Keywords: semiconductor, solar cells, Electrical Conductivity,

Abstract :

Gallium arsenide is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure. GaAs is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, aluminum gallium arsenide and others. From this view point, study of the electronic properties of GaAs single crystals is of prime importance. In this experimental work, electrical conductivity of two kinds of p-type GaAs samples each doped with Cr and Co have been studied in the wide temperature range (100-400) K. Apart from temperature dependency of mobility of charge carriers also different predominant scattering mechanisms occurring in these crystals have been given.