The study of the Mobility of charge carriers in Gallium Arsenide semiconductor doped with Cr and Co used in solar cell of space shuttles

Subject Areas : Renewable energy

hassan khaleghi ¹ (دانشگاه آزاد اسلامی واحد سمنان)

Received: 2016-06-20 Accepted : 2016-06-22 Published : 2013-11-22

Keywords: semiconductor, mobility, solar cells,

Abstract :

GaAs is a binary III-V compound semiconductor in the periodic table. Having a direct energy gap of 1.42 eV at room temperature, GaAs is one of the widely used semiconductors in the technology and creation of solid state electronic devices such as solar cells. From this view point, study of the electronic properties of GaAs single crystals is of prime importance. In this experimental work, transport properties of two kinds of p-type GaAs samples each doped with Cr and Co have been studied in the wide temperature range (100-400) K. Apart from temperature dependency of mobility of charge carriers also different predominant scattering mechanisms occurring in these crystals have been given. Analysis of the temperature dependency of mobility, shows that, two kinds of scattering mechanisms namely, ionic and lattice scatterings are the dominant mechanisms at low and high temperatures, respectively.