Design and Simulation of a New Optimized Full-Adder Using Carbon Nano Tube Technology

Subject Areas : Semiconductor devices

Abbas Asadi Aghbolaghi ¹ (Kowsar Slamt Sepahan, Esfahan)
Mehran Emadi ² (Assistant Professor - Department of Electrical Engineering ,Mobarakeh Branch, Islamic Azad University, Mobarakeh)

Received: 2014-07-09 Accepted : 2015-05-09 Published : 2015-04-21

Keywords: Carbon Nano Tube, Carbon nano tube field effect transistor, full adder cell, VLSI design,

Abstract :

The full adder circuit is one of the most significant and prominent fundamental parts in digital processors and integrated circuits since it can be used for implementing all four basic computational functions including: addition, subtraction, multiplication, and division. so, in this paper a new low power and high performance full adder cell has been proposed with the benefit of using carbon nano tube field effect transistors. The proposed design contains 12 CNTFET transistors which are connected in pass transistor logic style to make the desired functionality. Carbon Nano Tube Field Effect Transistor (CNTFET) has modified electrical characteristics such as low power consumption and high speed in comparison with MOSFET transistor; The proposed design is simulated using Hspice software based on CNTFET model and 0.65V supply voltage. the simulations are done considering three different frequencies, and three different load capacitors. The simulation results, which demonstrated in tables and diagrams, proved the superiority of proposed design in terms of power consumption and performance (PDP) compared to the existing counterparts.

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