%0 Journal Article
%A Boussaha, Ahmed , Makhloufi, Rafik, Benbouta, Rachid , Brioua, Mourad
%T Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses.
%J Journal of Solid Mechanics
%V 16
%N 1
%P 65-73
%D 2024
%R https://doi.org/10.60664/jsm.2024.3031774
%U https://sanad.iau.ir/fa/Article/908848