A New Nonlinear Model of Body Resistance in Nanometer PD SOI MOSFETs

Subject Areas : Renewable energy

Arash Daghighi ¹ ( Assistant Professor/Shahrekord University )
Azam Askari Khoshuei ² ( MSc/University of Applied Science and Technology - Tiran and Karvan Branch )

Received: 2009-10-07 Accepted : 2010-07-29 Published : 2011-02-01

Keywords: PSP SOI, PD SOI, body resistance, body voltage, nanometer,

Abstract :

In this paper, a nonlinear model for the body resistance of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of  ISE-TCAD software, the indicating factors of body resistance in nanometer transistors and then are shown, using the surface potential model. A mathematical relation to calculat the body resistance incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and three-dimensional simulation results.