A Survey to Monolithic Microwave Integrated Circuit Design Technology

Subject Areas : Majlesi Journal of Telecommunication Devices

Amir Hossein Mozafari ¹ , Behzad BahramiNejad ²

1 - Department of Electrical Engineering, Islamic Azad University, Majlesi Branch, Esfahan, Iran
2 - Department of Electrical Engineering, Islamic Azad University, Majlesi Branch, Esfahan, Iran

Received: 2014-02-12 Accepted : 2014-02-12 Published : 2014-06-01

Keywords:

References:

[1] Uyeda, J., et al., “0.1 μm InP HEMT MMIC Fabrication on 100 mm Wafers for Low Cost, High Performance Millimeter-Wave Applications,” Proc. GaAs MANTECH Conference, Miami Beach, FL, May 3–5, 2004.

[2] Milligan, J. W., et al., “Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology,” Proc. GaAs MANTECH Conference, Miami Beach, FL, May 3–5, 2004.

[3] Kikkawa, T., et al., “An Over 200-W Output Power GaN HEMT Push-Pull Amplifier with High Reliability,” Proc. IEEE Microwave Theory Tech. Symposium, Forth Worth, TX, June 6–11, 2004.

[4] http://www.triquint.com/prodserv/divisions/foundry/docs/HFET.pdf.

[5] http://www.research.ibm.com/DAMOCLES/html_files/hfet.html.

[6] L., Devlin, S., Glynn, Gr., Pearson and A., Dearn, “The Design of E-band MMIC Amplifiers”,August, 2010.

[7] E C., Niehenke, F., Robert A. Pucel, Life Fellow, and I J., Bahl, Fellow, “Microwave and Millimeter-Wave Integrated Circuits”, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol. 50, No. 3, March 2002.