Modelling of Drain Current of MOSFET Transistor in Terms of Gate Oxide Thickness

Subject Areas : Majlesi Journal of Telecommunication Devices

Masoud  Pourgholam ¹ (Babol Noshirvani University of Technology)
Bahram  Azizollah Ganji ² ()

Received: 2016-01-27 Accepted : 2016-04-26 Published : 2016-05-01

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References:

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