Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures
Subject Areas : Journal of Theoretical and Applied PhysicsMin-Hao Hong 1 , Dung-Ching Perng 2
1 - Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University
2 - Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University
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