Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures

Subject Areas : Journal of Theoretical and Applied Physics

Min-Hao Hong ¹ , Dung-Ching Perng ²

1 - Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University
2 - Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University

Accepted : 2017-12-01 Published : 2017-12-01

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