Transistors based on gallium nitride (GaN), growth techniques, and nanostructures

Subject Areas : Journal of Theoretical and Applied Physics

Hamidreza Ravanbakhsh ¹ , Leila Shekari ²

1 - Hamidreza Ravanbakhsh, Department of Physics, Amirkabir University of Technology, Tehran, Iran
2 - Leila Shekari, Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Tehran, Iran

Received: 2022-06-23 Accepted : 2022-08-13 Published : 2022-12-01

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