Transistors based on gallium nitride (GaN), growth techniques, and nanostructures
Subject Areas : Journal of Theoretical and Applied Physics
Hamidreza Ravanbakhsh
1
(Hamidreza Ravanbakhsh, Department of Physics, Amirkabir University of Technology, Tehran, Iran)
Leila Shekari
2
(Leila Shekari, Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, Tehran, Iran)
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