Influence of low temperature annealing on structural, optoelectrical and morphological properties of In2S3 thin films grown by thermal evaporation method with Bk7 substrate
Subject Areas : journal of New Materials
1 - Department of solid state physics, Marv.C., Islamic Azad University, Marvdasht, Iran
Keywords: Thin films, Indium sulfide, Thermal annealing, Raman spectroscopy, Thin films solar cell.,
Abstract :
In thin-film solar cells based on multi-component semiconductors like CuInₓGaₓ₋₁Se₂ (CIGS), the buffer layer between the p-type absorber and low-resistance n-type layer plays a crucial role. Typically, n-conductive buffer layers employ wide-bandgap semiconductors such as cadmium sulfide (CdS) deposited from chemical solutions. Chemically vapor-deposited CdS layers (40-100 nm thick) in CIGS solar cells have achieved ~21% conversion efficiency. However, due to CdS toxicity, researchers are seeking alternative materials. Current investigations focus on B32C63 semiconductor compounds (where B32 = Al/Ga/In and C63 = S/Se/Te) for developing radiation-resistant, high-efficiency thin-film solar cells. Among these, the binary compound In2S3 has shown particular promise. This study aims to obtain new data on the microstructure and optical properties of In2S3 thin films as functions of deposition methods, with potential implications for advancing thin-film photovoltaic technology.
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