Subject Areas : Journal of Optoelectronical Nanostructures
Abbas Ghadimi
1
,
Mohamad Ahmadzadeh
2
1 - Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran
2 - Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
Keywords:
Abstract :
[1] K. Murali Krishna, M. Ganesh Madhan, Numerical Simulation of High-Temperature VCSEL Operation and Its Impact on Digital Optical Link Performance, Presented at Nano Elec. Circuits and Com. Sys., (2018, August), [Online]. Available: https://link.springer.com/chapter/10.1007/978-981-13-0776-8_31.
[2] Vladimir P. Kalosha, Vitaly A. Shchukin, Nikolay Ledentsov, Nikolay N. Ledentsov, Comprehensive Analysis of Electric Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers, IEEE Journal of Sel. Top. in Quantum Elec., [Online]. 25(6) (2019, July),1-9 ,Available: https://ieeexplore.ieee.org/abstract/ document/ 8765 756.
[3] A. I. Nashed, Michel Lestrade, Z. Q. Li, Z. M. Simon Li, Efficient Optical Modeling of VCSELs using Full-Vectorial FDFD method, Presented at International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), (2019, July) [Online].
Available: https://ieeexplore.ieee.org/abstract/document/8806850.
[4] R Sarzala, W Nakwaski, Methods to improve performance of the 1.3ىm Oxide Confined GaInNAs/GaAs quantum well VCSELs, 12th International Conference on Transparent Optical Networks(ICTON), (2010, June) [Online]. Available: https://ieeexplore.ieee.org/document/5549020.
[5] R Sarzala, L Piskorsi, R Kurdawiec, W Nakwaski, Optimization of GaInNAs quantum well VCSEL emitting at 2.33 ىm, App. Phys. A, [Online]. 115(3), (2014, June) 961-969,
Available: https://link.springer.com/article/10.1007/s00339-013-7915-9.
[6] P.S Menon, K Kandiah, S Sharri, N.Y Majlis, Comparison of mesa and device diameter variation in double wafer- fused multi quantum-well, long wavelength, VCSELs, Sains Malaysiana, [Online]. 6(40), (2011, November) , 631-636, Available: https://www.semanticscholar.org/paper/InP-based-multi-quantum-well-mole-fraction-effects-Visvanathan-Shaari/58b2febc711943d3ba9a3aea11ef7a7f34fab215.
[7] D. H. Hsieh, A. J. Tzou, T. S. Kao, F. I. Lai, D. W. Lin, B. C. Lin, T. C. Lu, W. C. Lai, C. H. Chen, and H. C. Kuo, Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer, Optic. Exp., [Online]. 23(21), (2015,Oct ) 27145-27151, Available: https://www.osapublishing.org/oe/ abstract.cfm?uri=oe-23-21-27145.
[8] Priyanka Goyal; Mohit Sharma; Ananya Jha; Monika Kumari; Somendra P. Singh; Nikita Singh, Gurjit Kaur, Design and analysis of VCSEL LASER for
third window of optical communication system, 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), [Online]. Available: https://ieeexplore.ieee.org/document/7755512.
[9] Huize Fan; Kai Liu; Qi Wei; Min Zhang; Xiaomin Ren; Yongqing Huang; Xiaofeng Duan, The simulation of monolithic vertical integration of VCSEL and RCE photodiode, 16th International Conference on Optical Communications and Networks (ICOCN), (2017, Aug), [Online]. Available: https://ieeexplore.ieee.org/ document/8121413.
[10] P.V. Mena; J.J. Morikuni; S.-M. Kang; A.V. Harton; K.W. WyattA, simple rate-equation-based thermal VCSEL model, J. Light wave. Tech., [Online]. 17(5), (1999, May), 865 – 872, Available: https://ieeexplore.ieee.org/document/762905.
[10] M.Rezvani. J, Simulation of Direct Pumping of Quantum Dots in a Quantum Dot Laser,” JOPN. [Online]. 2(2), (2017), 61-70, Available: http://jopn.miau.ac.ir/ article_2425.html.
[11] M. Riahinasab, E.Darabi, Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL, ,” JOPN. [Online]. 3(2), (2018), 65-86, Available: http://jopn.miau.ac.ir/article_2876.html.
[12] Z. Danesh. K, Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering,” JOPN. [Online]. 4(1), (2019), 1-26, Available: http://jopn.miau.ac.ir/article_3382.html.
[13] M.Zaki, M.hosseini, Controlling the Occurrence of Rogue Waves in an Optically Injected Semiconductor Laser via Changing The Injection Strength,”JOPN. [Online]. 2(3), (2017), 39-46, Available: http://jopn.miau.ac.ir/article_2430.html.
[14] Farah Z, Jasim, Khalid Omar and Z.Hassan, Multiple quantum well of GaAs VCSEL structure, Journal of Opt. and adv. Mat., [Online]. 11(11), (2009, November), 1723-1727, Available: https://old.joam.inoe.ro/ index.php?option= magazine&op =view &idu=2222&catid=44.
[15] A.Ghadimi, M.Ahmadzadeh, The Effect of Doping Change in Distributed Bragg Reflector (DBR) Layers on the Operation at Different Temperatures of an InP-based Vertical Cavity Surface Emitting Laser (VCSEL),” Lasers. In. Eng. [Online]. 40 (2018) 149–159, Available:https://www.oldcitypublishing.com/journals/lie-home/lie-issue-contents/lie-volume-40-number-1-3-2018/lie-40-1-3-p-149-159/.
[16] Zandi Goharrizi, Gh. Alahyarizadeh, Z.Hassan, H.Abu Hassan, Low-dimensional Systems and Nanostructures,” Physica E. [Online]. 50 (2013, May) 61-66, Available: https://www.sciencedirect.com/science/article/pii/S1386947713000532.
[17] Yuta Suzuki, Shin-ichiro Tezuka, Numerical simulation of 3D Fox–Li integral equation described by Rayleigh–Sommerfeld diffraction for MEMS-VCSEL,” Optical Review [Online]. 26 (2019, October) 430-435, Available: https://link.springer.com/article/10.1007/s10043-019-00551-1
[18] Karan Mehta, Yuh-Shiuan Liu, Jialin Wang, Hoon Jeong, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupu, Thermal Design Considerations for III-N Vertical-Cavity Surface-Emitting Lasers Using Electro-Opto-Thermal Numerical Simulations,” IEEE Journal of Quantum Electronics [Online]. 55(5) (2019, October) 1-8.
Available:https://ieeexplore.ieee.org/abstract/document/8817911
