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  1 - Effects of electric field on magnetic properties of MnxGe1-xdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$Mn_{x}Ge_{1-x}$$end{document} diluted magnetic semiconductors
  Gezahegn Assefa P. Singh
  10.1007/s40094-015-0195-3
  AbstractWe report the effect of external electric field (EEF) on the magnetic properties of MnxGe1-xdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} أکثر

  AbstractWe report the effect of external electric field (EEF) on the magnetic properties of MnxGe1-xdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$small {Mn_{x}Ge_{1-x}}$$end{document}, diluted magnetic semiconductor. We present a Kondo Lattice Model type Hamiltonian with exchange coupling between localized spins, itinerant holes and the EEF. The magnetization, the dispersion and critical temperature (Tcdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$T_{c}$$end{document}) are calculated for different values of EEF parameters (αdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$alpha$$end{document}) using double time temperature-dependent Green function formalism. The enhancement of the (Tcdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$T_{c}$$end{document}) with the EEF is shown to be very distinct and is in agreement with recent experimental observation and much required for spintronics applications and devices. تفاصيل المقالة
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  2 - Dynamics of a low-threshold optically pumped organic vertical-cavity surface-emitting laser
  Mohammad Reza Shayesteh Ghafar Darvish
  10.1007/s40094-016-0209-9
  AbstractWe propose a low-threshold optically pumped organic vertical-cavity surface-emitting laser (OVCSEL). This device has the capability to apply both electrical and optical excitation. The microcavity structure consists of an organic light emitting diode with field- أکثر

  AbstractWe propose a low-threshold optically pumped organic vertical-cavity surface-emitting laser (OVCSEL). This device has the capability to apply both electrical and optical excitation. The microcavity structure consists of an organic light emitting diode with field-effect electron transport inserted in a high-quality factor double distributed Bragg reflector. The simulated quality factor of the microcavity is shown to be as high as 16,000. Also, we investigate threshold behaviour and the dynamics of the optically pumped OVCSEL with sub-picosecond pulses. Results from numerical simulation show that lasing threshold is 12.8 pJ/0.64 µJ cm−2 when pumped by sub-picosecond pulses of λ = 400 nm wavelength light. تفاصيل المقالة
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  3 - Investigation the Dependence of Mobility on Carrier Concentration and Temperature in Organic Semiconductors
  Ali Mahmoudloo
  10.30495/jptc.2023.70455.1244
  The charge carrier mobility is a key performance criteria for organic semiconductors. High-mobility values allow fast device operation as needed for low-cost electronics on large areas with performance meeting market demands. Mobility is conveniently extracted from thin أکثر

  The charge carrier mobility is a key performance criteria for organic semiconductors. High-mobility values allow fast device operation as needed for low-cost electronics on large areas with performance meeting market demands. Mobility is conveniently extracted from thin film transistors (TFT) characteristics using the standard gradual channel approximation model. This approach evaluates the mobility of charges during their transport through the high-density accumulation layer at the semiconductor-dielectric interface. This value is therefore directly representative of transistor operation and is a relevant parameter for device integration into circuits. In this paper we have calculated the mobility of an organic semiconductor, one can use percolation theory,. The current flows through the bonds connecting the sites in the network. So far, much attention has been devoted to explain the temperature dependence of the mobility. The model gives a non-Arrhenius-type temperature dependence, which has also been supported by numerical simulations and analytical calculations. تفاصيل المقالة
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  4 - Hydrogen solar fuel generation from photocatalytic decomposition of H2S-containing media via nanostructured solid-solution semiconductor
  M Ghanimati Sh Afshari M Lashgari
  Hydrogen sulfide is a flammable, malodorous, highly toxic and corrosive compound which is produced in large quantities as a by-product in many industrial processes. However, it will be economically and environmentally advantageous if it is photodecomposed to generate hy أکثر

  Hydrogen sulfide is a flammable, malodorous, highly toxic and corrosive compound which is produced in large quantities as a by-product in many industrial processes. However, it will be economically and environmentally advantageous if it is photodecomposed to generate hydrogen, which is a clean and renewable energy carrier. In this paper, a nanostructured solid-solution semiconductor material from the family of cadmium-zinc-sulfide was synthesized through a facile hydrothermal method and was applied as alloy photocatalyst to generate hydrogen fuel via a H2S photodecomposition process. Morphological and optical properties of the sample have been characterized by XRD, FE-SEM, EDS and UV-vis DRS techniques. Solid-solution semiconductor exhibited a good photocatalytic performance. تفاصيل المقالة
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  5 - Passivity of AISI 316L stainless steel as a function of nitric concentration
  Arash Fattah-alhosseini Mohamad Ali Sonamia Atena Loghmani Fariba Zerafati Shoja
  In this study, electrochemical behaviour of passive films formed on AISI 316L stainless steel (AISI 316L) in three acidic solutions concentrations (0.3, 0.6, and 0.9M HNO3) under open circuit potential conditions were evaluated by potentiodynamic polarization, Mott&ndas أکثر

  In this study, electrochemical behaviour of passive films formed on AISI 316L stainless steel (AISI 316L) in three acidic solutions concentrations (0.3, 0.6, and 0.9M HNO3) under open circuit potential conditions were evaluated by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS) techniques. The potentiodynamic polarization results showed that the corrosion potentials of AISI 316L shift towards positive direction with increase in solution concentration. Also, these results reveal that the corrosion rate of AISI 316L is enhanced in solutions with higher nitric content. Mott–Schottky analysis revealed that passive films behave as p-type and n-type semiconductors at potentials below and above the flat band potential, respectively. Also, Mott–Schottky analysis indicated that the donor and acceptor densities increased with solution concentration. EIS data showed that the equivalent circuit Rs((RctQdl)(RfQf)) by two time constants is applicable. Also, EIS results reveal that the charge transfer resistance and passive film resistance decrease with solution concentration. تفاصيل المقالة
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  6 - Relativistic Modification of the Exciton’s mass in Monolayer TMDCs Materials
  Arezu Jahanshir
  The study of the exotic bound states in atomically thin semiconductors with a transition metal atom has attracted a great deal of interest in quantum field theory. The reality of transition metal dichalcogenide monolayer materials has been the subject of intense concern أکثر

  The study of the exotic bound states in atomically thin semiconductors with a transition metal atom has attracted a great deal of interest in quantum field theory. The reality of transition metal dichalcogenide monolayer materials has been the subject of intense concern among theoreticians and experimenters in recent years. To obtain transition metal dichalcogenide monolayer materials with specific properties; it is extremely important to develop particular strategies to obtain specific exotic structures. These exotic structures are considered to be in a two-particle/quasiparticle bound state: exciton and biexciton (exciton-exciton), exciton-polariton, polariton-phonon. Quantum field theory, in its widest sense, is a method to control and achieve reasonable goals. Control of such states enables the control of properties and access to a range of quantum properties, otherwise inaccessible. The relativistic mass spectrum and relativistic constituent mass of particles in monolayer transition metal dichalcogenide monolayer materials have been calculated using the relativistic Schrödinger equation with strong Coulomb-type potential between the electron and hole. The ground state of the transition metal dichalcogenide monolayer has been studied. Therefore, the investigation may indicate promising applications in quantum information processing and electronic device technologies based on the semiconductor quantum dots system. تفاصيل المقالة
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  7 - A Deep Survey upon the Synthesis of AuS Nanostructures
  Kourosh  Motevalli Zahra Yaghoubi
  In this research, the dendritic gold(I) sulfide nanostructures were successfully synthesized by a simple hydrothermal route. The effect of temperature , and reaction time, on the morphology and particle dimension was alsoinvestigated. Thus, the efficiency of synth أکثر

  In this research, the dendritic gold(I) sulfide nanostructures were successfully synthesized by a simple hydrothermal route. The effect of temperature , and reaction time, on the morphology and particle dimension was alsoinvestigated. Thus, the efficiency of synthesized gold sulfide nanostructures in thin-film solar cells was evaluated. The results indicated very well that the particle dimension and morphology have effect on solar cells efficiency and dendritic gold sulfide nano-structures have higher efficiency compared to sphericaland rod-like gold sulfide nanostructures. Moreover, depositing of dendritic gold sulfide upon gold sulfide nanoparticles led to obtaining 3.28% cell efficiency that in comparison with sole dendritic nanostructures and sole nanoparticles (1.89%), efficiency improvements of 48 and 85% were, respectively,obtained and also this important point must be elucidated that this nanostructures are useful for mechanical usages especially in manufacturing some linked rings in water treatment installations. Also, if we want to be decided for comparing with similar works presented for gold sulfide preparation [1–10],then, this fact will be illuminated easily that we synthesized dendritic gold sulfide nano-structures using new initiating reagents and without using surfactants by an easy route which can be more able in solar cells. تفاصيل المقالة