Design of Optimum Active Layer Thickness in Double Heterostructure Broad Area Ga As/Al_x Ga_(1-x) As Laser Diodes

الموضوعات : journal of Artificial Intelligence in Electrical Engineering

nasser moslehi milani ¹ (Department of Physics, Ahar Branch, Islamic Azad University, Ahar, Iran)
mohammad salmani yengejeh ² (Department of Mathematics, Chalous Branch, Islamic Azad University, Chalous, Iran)
Majid shabzendeh ³ (Department of Physics, Ahar Branch, Islamic Azad University, Ahar, Iran)

تاريخ الإرسال : 07 الثلاثاء , رجب, 1443 تاريخ التأكيد : 05 الأربعاء , رمضان, 1443 تاريخ الإصدار : 13 الثلاثاء , محرم, 1442

الکلمات المفتاحية: Optimum active layer thickness, Maxwell equations, Separate Confinement Heterostructure (SCH),

ملخص المقالة :

In this work, we calculate optimum thickness of bulk active layer for Ga As/〖Al〗_x 〖Ga〗_(1-x) As laser diodes. We have done these calculations for fundamental oscillation mode of laser with different aluminium contents (fractional percents) in confinement layers. Our calculations were based on the analytical solution of Maxwell equations. The results indicate that the optimum thickness for fundamental mode is dependent on difference of refractive indices of active and confinement layers. The results reveal that the best active layer thicknesses for fundamental mode of laser are d_0=0.63,0.44,0.36 and 0.32 μm for x=0.1,0.2,0.3 and 0.4 aluminium percents in separate confinement heterostructure (SCH) layers respectively.