Simulation and fabrication of 3.5W 8.8-9.2 GHz power amplifier
الموضوعات : Majlesi Journal of Telecommunication Devices
mehdi Forouzanfar
1
(Birjand university)
الکلمات المفتاحية: discrete GaN HEMT transistors, matching circuit, Output Power, X-band, GaN HEMT,
ملخص المقالة :
This paper presents different steps of simulation and fabrication of a power amplifier, which was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz. The required wire bonds and matching circuits were characterized using three-dimensional simulations in HFSS and Momentum ADS software. The fabricated power amplifier provides an output power of 3.5W and a power gain of 13 dB.
[1]. R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard, and W. L. Pribble, "A review of GaN on SiC high electron-mobility power transistors and MMICs," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 6, pp. 1764-1783, 2012.
[2]. M. Forouzanfar, R. Feghhi, and M. Joodaki, "An 8.8–9.8 GHz 100W hybrid solid state power amplifier for high power applications," in 22nd Iranian Conference on Electrical Engineering (ICEE), 2014, pp. 433-437.
[3]. M.Forouzanfar, M. Joodaki, "Systematic Design of Hybrid High Power Microwave Amplifiers Using Large Gate Periphery GaN HEMTs”, Accepted in AEU international journal of electronics and communications.
[4]. M.Forouzanfar, M. Joodaki, "Efficiency Enhancement by Employing the Transistor Non-Linear Capacitors Effects in a 6W Hybrid X-band Class-J Power Amplifier," International Journal of RF and Microwave Computer-Aided Engineering, 2017.
