تفریق¬کننده¬های تقریبی کم¬مصرف و قابل¬اعتماد برای کاربردهای پردازش تصویر
الموضوعات :فاطمه پولادی 1 , فرشاد پسران 2 , نبی اله شیری 3
1 - گروه مهندسی برق، ,واحد شیراز، دانشگاه آزاد اسلامی، شیراز، ایران
2 - گروه مهندسی برق، ,واحد شیراز، دانشگاه آزاد اسلامی، شیراز، ایران
3 - گروه مهندسی برق، ,واحد شیراز، دانشگاه آزاد اسلامی، شیراز، ایران
الکلمات المفتاحية: محاسبات¬تقریبی, تفریق, تکنیک دروازه ورودی انتشار , ترانزیستورهای اثر میدانی نانولوله کربنی,
ملخص المقالة :
در این مقاله، دو تفریق¬کننده تقریبی جدید ارائه شده است. مدارهای پیشنهادی بر¬اساس تکنیکهای ورودی انتشار گیت (GDI) و آستانه دینامیکی (DT) پیادهسازی شدهاند و مدار پیشنهادی1 و مدارپیشنهادی2 نامگذاری شدهاند. تفریق¬کننده پیشنهادی 1 دارای 10 ترانزیستور است، در حالی که مدارپیشنهادی 2 دارای 12 ترانزیستور است. تفریق¬کننده¬ها توسط فناوری ترانزیستور اثر میدانی نانولوله کربنی 32 نانومتری (CNTFET) پیاده¬سازی می¬شوند. مطالعات مختلفی انجام شده و نشان¬دهنده راندمان و عملکرد بالای مدارها در شرایط مختلف بدون کاهش ولتاژ خروجی آنهاست که ناشی از استفاده از DT در اجرای آنها می¬باشد. مدارهای پیشنهادی از گیت¬های XOR و NOT استفاده می¬کنند که هر دو دارای 4 حالت از 8 حالت خطا هستند. تفریق¬کننده¬های ارائه شده را می¬توان در یک تقسیم¬کننده بدون¬علامت با ساختارهای مختلف اعم از عمودی، افقی، مربع و مثلثی و غیره پیاده¬سازی کرد و درنهایت می¬توان از آنها در برنامه¬های پردازش تصویر برای تشخیص تفاوت بین دو تصویر اعم از پزشکی یا پزشکی استفاده کرد. تصاویر استاندارد نتایج شبیهسازی عملکرد بهتر مدارهای پیشنهادی، مدارپیشنهادی1 و مدارپیشنهادی 2 را به ترتیب 36/88% و 25/83% صرفهجویی در PDP نشان میدهد.
Using approximate computing and GDI technique to reduce power consumption.
Integration of DT technique and CNTFET technology to solve problems of GDI gates.
Design of low-power and small-area approximate subtractors due to the use of only 10 and 12 transistors.
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