Optical characterization of Cu3N thin film with Swanepoel method
الموضوعات : Journal of Theoretical and Applied Physics
Davoud Dorranian
1
(
Plasma Physics Research Center, Science and Research Branch, Islamic Azad University
)
Laya Dejam
2
(
Plasma Physics Research Center, Science and Research Branch, Islamic Azad University
)
Gelareh Mosayebian
3
(
Plasma Physics Research Center, Science and Research Branch, Islamic Azad University
)
الکلمات المفتاحية: Copper nitride, Thin Film, Magnetron sputtering, Energy gap, Swanepoel method, 81.05.Je, 82.20.Fw, 78.20.Ci, 68.55.Jk,
ملخص المقالة :
AbstractSwanepoel method is employed for spectroscopic determination of optical properties of Cu3N thin film using transmittance data. Investigated films have been deposited using reactive magnetron sputtering system. Deposition time was 9 to 21 min. Refractive index, absorption coefficient, and bandgap energy of the samples are determined. Thickness of the films is calculated by Swanepoel method, and result is compared with the thickness of the films measured by profilmeter. It is shown that Swanepoel method is a reliable way to calculate the optical constants of thin films when the transmittance spectrum of the film is influenced by wavelike patterns due to reflection of the probe beam from different interfaces.
