Temperature dependence dielectric behavior of Ge-doped lead scandium tantalate single crystals
الموضوعات : Journal of Theoretical and Applied Physics
Chandra Kumar Dixit
1
(Department of Physics, Feroze Gandhi Institute of Engineering and Technology)
Anil Kumar Srivastava
2
(Central Laboratory of Material Science, Kamla Nehru Institute of Physical and Social Sciences)
الکلمات المفتاحية: Dielectric constant, Ferroelectric, Paraelectric, Crystal lattice, Conductivity,
ملخص المقالة :
AbstractThe doping of Pb2SeTaO6 with Ge ferroelectrics was produced by a high-temperature solution method. We measure dielectric constant, dielectric loss and conductivity in the temperature range −30°C to 200°C and frequency range 1 to 100 KHz. The value of dielectric constant of the Pb2SeTaO6 (PST) crystal remained the same after thermal annealing whereas they decreased after Ge doping in the phase transition temperature range of the PST single crystal. All samples were investigated for conductivity with increasing temperature.
