A Comparative Study of BSF Layers for InGaN Single-Junction and Multi-Junction Solar Cells

الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی

Maryam Amirhoseiny ¹ (Department of Engineering Sciences and Physics, Buein Zahra Technical University, Buein Zahra, Qazvin, Iran)
Majid Zandi ² (Shahid Beheshti University, Tehran, Iran)
Ahad Kheiri ³ (Shahid Beheshti University, Tehran, Iran)

تاريخ الإرسال : 26 الأحد , ربيع الثاني, 1444 تاريخ التأكيد : 22 الأربعاء , جمادى الأولى, 1445 تاريخ الإصدار : 20 الخميس , رجب, 1445

الکلمات المفتاحية: Simulation, Solar Cell, Back Surface Field, Heterojunction, InGaN,

ملخص المقالة :

Abstract The tunability of the InGaN band gap energy over a wide range provides a noble spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The ineffectiveness of single junction solar cell to convert solar full spectrum into electrical energy leads to transparency loss in addition with excess excitation loss. An efficient BSF layer is an essential structural element to attain high efficiency in solar cells. In this work the impact of the BSF layer for InGaN single-junction and multi-junction solar cells is studied using the computational numerical modeling with Silvaco ATLAS simulation technique. The open circuit voltage (Voc) and circuit current density (Jsc) characteristics of the simulated cells and the variation of external quantum efficiency as a function of solar cell structures have been studied. For the optimized cell structure, the maximum Jsc = 14.6 mA/cm², Voc = 3.087 V, and fill factor (FF) = 88.15% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 36.1%.

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