Observation of Raman Gain in Reduced Length of Bismuth Erbium Doped Fiber
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکیشریفه شاهی 1 , PARVANE MARNANI 2 , mohsen ranjbaran 3 , sulaiman harun 4
1 - Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran
2 - Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran
3 - Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran
4 - Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50630 Kuala lumpur, Malaysia
الکلمات المفتاحية: Bi-EDF, Compact gain medium, C-band, Dual wavelength source, Raman gain,
ملخص المقالة :
Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gain
medium based erbium doped fiber amplifier (EDFA) is reported in new and compact
design in near infrared spectral regions. The bismuth glass host provides the
opportunity to be doped heavily with erbium ions to allow a compact optical gain fiber
amplifier design by using reduced fiber length and the 1480 nm low pump power
around 150 mW. A extended Raman amplification bandwidth of 45 nm, from 1520-
1565 nm (C-band window) wavelengths is empirically proposed in a backward and
dualwavelength pumped Bi-EDF by employing 350 mW Raman pump in 1440 nm.
Because of the short length gain medium as a nonlinear Bi-EDF, amplification of 3 dB
is achieved over a C-band wavelength range. This simple C-band Raman amplifier
based Brillouin and ASE backscattering was constructed to test the forward, backward
and dual-wavelength pump laser and on-off gain. A peak gain of 1.53 dB was obtained
with a 3-dB bandwidth of 45 nm that the varieties of gain is 2.02 dB around 1545 nm in
backward pumping design. It array will be employ for sensing, spectroscopy and
telecommunication systems.
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