Study of Photo-Conductivity in MoS2 Thin Films Grown in Low-Temperature Aqueous Solution Bath
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکی
Mahdi Zavvari
1
,
Yashar Zehforoosh
2
1 - Urmia branch, Islamic Azad University
2 - Microwave and Antenna Research Center, Urmia Branch, Islamic Azad University, Urmia, Iran
الکلمات المفتاحية: Chemical bath deposition, Molybdenum disulfide, Transition metal dichalcogenide, Photocurrent,
ملخص المقالة :
An experimental study over the optical response of thin MoS2 films grown
by chemical bath deposition (CBD) method is presented. As two important factors, the
effect of bath temperature and growth time are considered on the photocurrent
generation in the grown samples. The results show that increasing the growth time leads
to better optical response and higher difference between dark and photocurrent. For
higher bath temperatures the layer loses its uniformity and the current reduces. Better
performance of optical response is obtained for t=90min and T=70oC. We also studied
the effect of post-annealing on the performance and quality of thin films. The I-V
measurements show no current flow for annealed films because of rupture of the film
structure. Temporal response of the films to light source ON and OFF states is also
studied and the results showed relaxation of photocurrent after about several seconds.
The importance of the MoS2 thin films obtained by CBD method is low-temperature
process and large area of fabricated layers which can be used in many applications.
[1] H. Kalt and C. F. Klingshirn, Semiconductor Optics 1: Linear Optical Properties of Semiconductors Switzerland AG; Springer, 2019.
[2] S. L. Chuang, Physics of Photonic Devices, Wiley, 2012.
[3] V. Fallahi, M. Seifouri, Novel structure of optical add/drop filters and multi-channel filter based on photonic crystal for using in optical telecommunication devices. J. Optoelectron. Nanostruct. 4(3) (2019) 53-68.
[4] C. E. Png, S. Sun, B. Ping, State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength. Nanophoton. 4 (2015) 277-302.
[5] D. J. Norris, Multispectral quantum-dot photodetectors. Nat. Photon. 13 (2019) 230-232.
[6] M. Zavvari and V. Ahmadi, Dynamics of avalanche quantum dot infrared photodetectors. Mod. Phys. Lett. B. 26 (2012) 1250216.
[7] E. Rodriguez, A. Mottaghizadeh, D. Gacemi, et al., Room-Temperature, Wide-Band, Quantum Well Infrared Photodetector for Microwave Optical Links at 4.9 ىm Wavelength. ACS Photon. 5 (2018) 3689-3694.
[8] M. Karimi, K. Abedi, and M. Zavvari, Resonant cavity enhanced quantum ring photodetector at 20ىm wavelength. Opt. Quant. Electron. 45 (2013) 1249–1258.
[9] A. Gazman, Z. Zhu, M. Bahadori, K. Bergman, Wavelength Locking of Multicast Signals Using Photo-Conductive Effect in Silicon Photonic Platform. Presented at IEEE Optical Interconnects Conference (OI), (2018).
[10] Q. Guo, A. Pospischil, M. Bhuiyan, Black Phosphorus Mid-Infrared Photodetectors with High Gain. Nano Lett. 16 (2016) 4648-4655.
[11] S. Liang, W. H. Liu, D. Chi, Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides. Prog. Cryst. Growth Charact. Materials. 62 (2016) 9-28.
[12] M. Amani, M. L. Chin, A. G. Birdwell, T. P. O’Regan, S. Najmaei, Z. Liu, P. M. Ajayan, J. Lou, M. Dubey, Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Appl. Phys. Lett. 102 (2013) 193107.
[13] M. Gholampour, A. Abdollah-zadeh, L. Shekari, R. Poursalehi, M. Soltanzadeh, Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature. J. Optoelectron. Nanostruct. 3(1) (2018) 51-64.
[14] B. B. Nasab, A. Kosarian, N. A. Sheini, Effect Of Zinc Oxide RF Sputtering Pressure on the Structural and Optical Properties of ZnO/PEDOT:PSS Inorganic/Organic Heterojunction. J. Optoelectron. Nanostruct. 4(3) (2019) 33-46.
[15] J. D. Cain, F. Shi, J. Wu, V. P. Dravid, Growth Mechanism of Transition Metal Dichalcogenide Monolayers: The Role of Self-Seeding Fullerene Nuclei. ACS Nano 10 (2016) 5440–5445.
[16] K. Taneja, A. M. Madiraju, M. Kumar, R. Seelaboyina, A. K. Keshri, S. Mahajan, Substrate Rotation Chemical Bath Deposition of Cadmium Sulfide Buffer Layers for Thin Film Solar Cell Application. Presented at International Conference on Solar Energy Photovoltaics, (India, 2012).
[17] M. Husham, Z. Hassan, A. M. Selman, N. K. Allam, Microwave-assisted chemical bath deposition of nanocrystalline CdS thin films with superior photodetection characteristics. Sens. Actuat. A. Phys. 230 (2015) 9-16.
[18] X. Duan, C. Wang, A. Pan, R. Yu, X. Duan, Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Chem. Soc. Rev. 44 (2015) 8859-8876.
[19] W. Choi, N. Choudhary G. H. Han, J. Park. D. Akinwande, Y. H. Lee, Recent development of two-dimensional transition metal dichalcogenides and their applications. Materialstoday 20 (2017) 116-130.
[20] S. Manouchehri, J. Zahmatkesh, M. H. Yousefi, Substrate Effects on the Structural Properties of Thin Films of Lead Sulfide. J. Optoelectron. Nanostruct. 3(2) (2018) 1-18.
[21] S. Manzeli, D. Ovchinnikov, D. Pasquier, O. V. Yazyev, 2D transition metal dichalcogenides. Nat. Rev. Mater. 2 (2017) 17033.
[22] V. B. Miandoab, E. S. Iranizad, H. Kahrade, The effect of concentration and time of hydrothermal process on the fluorescent property of Molybdenum Diselenide nano-layers. J. Optoelectron. Nanostruct. 1(3) (2016) 35-42.
[23] S. Ahmed, J. Yi, Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors. Nano-Micro Lett. 9 (2017) 50.
[24] O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Ultrasensitive photodetectors based on monolayer MoS2 Nat. Nanotech. 8 (2013) 497–501.
[25] M. Zavvari, Y. Zehforoosh, Growth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method. J. Optoelectron. Nanostruct. 3(4) (2018) 35-44
