Quantum modeling of light absorption in graphene based photo-transistors
الموضوعات : فصلنامه نانوساختارهای اپتوالکترونیکیHamid Faezinia 1 , Mahdi zavvari 2
1 - Department of Electronic Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran
2 - Department of Electronic Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran
الکلمات المفتاحية: Non-equilibrium Green&rsquo, s function, Graphene nano-ribbon, Photo-transistor, Self-energy,
ملخص المقالة :
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a self-energy matrix is introduced which takes the effect of optical absorption in GNR channel into account. The self-energy matrix is treated as a scattering matrix which leads to creation of carriers. The transition matrix element is calculated for optical absorption in graphene channel and is used to obtain the optical interaction self-energy. The resulting self-energy matrix is added to retarded Green’s function and is used in transport equations for calculation of current flow in the photo-transistor. By considering the effect of optical radiation, the dark and photocurrent of detector are calculated and results are used for calculation of responsivity.
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